TY - JOUR
T1 - Synthesis of lithography free micro-nano electron field emitters using pulsed KrF laser assisted metal induced crystallization of thin silicon films
AU - Shamim, Mohammed Zubair Mohammed
AU - Persheyev, Saydulla
AU - Zaidi, Monji
AU - Usman, Mohammed
AU - Shiblee, Mohammad
AU - Ali, Syed Jaffar
AU - Rahman, Mohammad Rizwanur
N1 - The authors gratefully acknowledge the support by the College of Engineering Research Center under the Deanship of Scientific Research, King Khalid University, Saudi Arabia.
PY - 2020/1/2
Y1 - 2020/1/2
N2 - Hydrogenated amorphous thin silicon films (a-Si:H) deposited on metal coated glass substrates were investigated to analyze the effect of a novel processing technique called Laser Assisted Metal Induced Crystallization (LAMIC) on their electron field emission (FE) properties. Post-surface characterization of the processed films showed increased surface roughness and the presence of uniformly spaced “island-like” micro-nano structures on the surface of metal coated backplane samples. Best FE results were obtained from samples sputtered with a thin layer of Aluminum (Al) on top and cross laser annealed at 190 mJ/cm2 (y-axis) and 100 mJ/cm2 (x-axis). FE measurements indicate a low turn-on electric field of less than 16 V/µm with emission currents in the order of 10−6 A. FE results were found to be particularly dependent on the laser fluence and the surface morphology exhibited very high discharge resistance. Oxidation of the films was observed to deteriorate their FE characteristics, thereby increasing the emission threshold to 36 V/µm. Diode configured field emission display prototypes are fabricated to exemplify their potential as cold cathode emitters.
AB - Hydrogenated amorphous thin silicon films (a-Si:H) deposited on metal coated glass substrates were investigated to analyze the effect of a novel processing technique called Laser Assisted Metal Induced Crystallization (LAMIC) on their electron field emission (FE) properties. Post-surface characterization of the processed films showed increased surface roughness and the presence of uniformly spaced “island-like” micro-nano structures on the surface of metal coated backplane samples. Best FE results were obtained from samples sputtered with a thin layer of Aluminum (Al) on top and cross laser annealed at 190 mJ/cm2 (y-axis) and 100 mJ/cm2 (x-axis). FE measurements indicate a low turn-on electric field of less than 16 V/µm with emission currents in the order of 10−6 A. FE results were found to be particularly dependent on the laser fluence and the surface morphology exhibited very high discharge resistance. Oxidation of the films was observed to deteriorate their FE characteristics, thereby increasing the emission threshold to 36 V/µm. Diode configured field emission display prototypes are fabricated to exemplify their potential as cold cathode emitters.
KW - Electron field emission
KW - Excimer laser crystallization
KW - Hydrogenated amorphous silicon
KW - Metal induced crystallization
KW - Micro-nano emitters
UR - http://www.scopus.com/inward/record.url?scp=85078975456&partnerID=8YFLogxK
U2 - 10.1080/10584587.2019.1674971
DO - 10.1080/10584587.2019.1674971
M3 - Article
AN - SCOPUS:85078975456
SN - 1058-4587
VL - 204
SP - 121
EP - 132
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
IS - 1
ER -