Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

Irina Afonina; Peter J. Skabara; Filipe Vilela; Alexander L. Kanibolotsky; John C. Forgie; Ashu K. Bansal; Graham A. Turnbull; Ifor D. W. Samuel; John G. Labram; Thomas D. Anthopoulos; Simon J. Coles; Michael B. Hursthouse

doi:10.1039/b919574b

Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

Irina Afonina, Peter J. Skabara, Filipe Vilela, Alexander L. Kanibolotsky, John C. Forgie, Ashu K. Bansal, Graham A. Turnbull, Ifor D. W. Samuel, John G. Labram, Thomas D. Anthopoulos, Simon J. Coles, Michael B. Hursthouse

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V-1 s(-1).

Original language	English
Pages (from-to)	1112-1116
Number of pages	5
Journal	Journal of Materials Chemistry
Volume	20
Issue number	6
DOIs	https://doi.org/10.1039/b919574b
Publication status	Published - 2010

Keywords

THIN-FILM TRANSISTORS
RIGID-CORE OLIGOTHIOPHENE-S,S-DIOXIDES
STACKED ORGANIC SEMICONDUCTOR
FIELD-EFFECT TRANSISTORS
SOLID-STATE PROPERTIES
FUSED THIOPHENES
PHOTOLUMINESCENCE EFFICIENCY
ALPHA-OLIGOTHIOPHENES
7 RINGS
CRYSTAL

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Afonina, I., Skabara, P. J., Vilela, F., Kanibolotsky, A. L., Forgie, J. C., Bansal, A. K., Turnbull, G. A., Samuel, I. D. W., Labram, J. G., Anthopoulos, T. D., Coles, S. J., & Hursthouse, M. B. (2010). Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials. Journal of Materials Chemistry, 20(6), 1112-1116. https://doi.org/10.1039/b919574b

@article{46edfd0c31b44bafa3752b3401480b4c,

title = "Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials",

abstract = "Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V-1 s(-1).",

keywords = "THIN-FILM TRANSISTORS, RIGID-CORE OLIGOTHIOPHENE-S,S-DIOXIDES, STACKED ORGANIC SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS, SOLID-STATE PROPERTIES, FUSED THIOPHENES, PHOTOLUMINESCENCE EFFICIENCY, ALPHA-OLIGOTHIOPHENES, 7 RINGS, CRYSTAL",

author = "Irina Afonina and Skabara, {Peter J.} and Filipe Vilela and Kanibolotsky, {Alexander L.} and Forgie, {John C.} and Bansal, {Ashu K.} and Turnbull, {Graham A.} and Samuel, {Ifor D. W.} and Labram, {John G.} and Anthopoulos, {Thomas D.} and Coles, {Simon J.} and Hursthouse, {Michael B.}",

year = "2010",

doi = "10.1039/b919574b",

language = "English",

volume = "20",

pages = "1112--1116",

journal = "Journal of Materials Chemistry",

issn = "0959-9428",

publisher = "Royal Society of Chemistry",

number = "6",

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T1 - Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

AU - Afonina, Irina

AU - Skabara, Peter J.

AU - Vilela, Filipe

AU - Kanibolotsky, Alexander L.

AU - Forgie, John C.

AU - Bansal, Ashu K.

AU - Turnbull, Graham A.

AU - Samuel, Ifor D. W.

AU - Labram, John G.

AU - Anthopoulos, Thomas D.

AU - Coles, Simon J.

AU - Hursthouse, Michael B.

PY - 2010

Y1 - 2010

N2 - Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V-1 s(-1).

AB - Three new diindenodithienothiophene (DITT) based materials were synthesised and their electrochemical properties investigated. The HOMO-LUMO gaps were observed to be 3.33, 3.48 and 2.81 eV, respectively. Cyclic voltammetry results indicate increased stability for the alkylated derivatives. The dioxide exhibits strong photoluminescence, giving a photoluminescence quantum yield of 0.72 in solution and 0.14 in the solid state. Hole mobility measurements were carried out on the non-alkylated derivative and the corresponding values were similar to 10(-4) cm(2) V-1 s(-1).

KW - THIN-FILM TRANSISTORS

KW - RIGID-CORE OLIGOTHIOPHENE-S,S-DIOXIDES

KW - STACKED ORGANIC SEMICONDUCTOR

KW - FIELD-EFFECT TRANSISTORS

KW - SOLID-STATE PROPERTIES

KW - FUSED THIOPHENES

KW - PHOTOLUMINESCENCE EFFICIENCY

KW - ALPHA-OLIGOTHIOPHENES

KW - 7 RINGS

KW - CRYSTAL

U2 - 10.1039/b919574b

DO - 10.1039/b919574b

M3 - Article

SN - 0959-9428

VL - 20

SP - 1112

EP - 1116

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

IS - 6

ER -

Synthesis and characterisation of new diindenodithienothiophene (DITT) based materials

Abstract

Keywords

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