Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes

M Boroditsky; I Gontijo; M Jackson; R Vrijen; E Yablonovitch; Thomas Fraser Krauss; CC Cheng; A Scherer; R Nhat; M Krames

Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes

M Boroditsky, I Gontijo, M Jackson, R Vrijen, E Yablonovitch, Thomas Fraser Krauss, CC Cheng, A Scherer, R Nhat, M Krames

Research output: Other contribution

Abstract

Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes. (C) 2000 American Institute of Physics. [S0021-8979(00)01107-5].

Original language	English
Volume	87
Publication status	Published - 1 Apr 2000

Keywords

GAN

Cite this

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title = "Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes",

abstract = "Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes. (C) 2000 American Institute of Physics. [S0021-8979(00)01107-5].",

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author = "M Boroditsky and I Gontijo and M Jackson and R Vrijen and E Yablonovitch and Krauss, {Thomas Fraser} and CC Cheng and A Scherer and R Nhat and M Krames",

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T1 - Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes

AU - Boroditsky, M

AU - Gontijo, I

AU - Jackson, M

AU - Vrijen, R

AU - Yablonovitch, E

AU - Krauss, Thomas Fraser

AU - Cheng, CC

AU - Scherer, A

AU - Nhat, R

AU - Krames, M

N1 - Journ Appl Phys

PY - 2000/4/1

Y1 - 2000/4/1

N2 - Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes. (C) 2000 American Institute of Physics. [S0021-8979(00)01107-5].

AB - Surface recombination is an important characteristic of an optoelectronic material. Although surface recombination is a limiting factor for very small devices it has not been studied intensively. We have investigated surface recombination velocity on the exposed surfaces of the AlGaN, InGaAs, and InGaAlP material systems by using absolute photoluminescence quantum efficiency measurements. Two of these three material systems have low enough surface recombination velocity to be usable in nanoscale photonic crystal light-emitting diodes. (C) 2000 American Institute of Physics. [S0021-8979(00)01107-5].

KW - GAN

UR - http://www.scopus.com/inward/record.url?scp=0000401785&partnerID=8YFLogxK

M3 - Other contribution

VL - 87

ER -

Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes

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