Surface electronic properties of undoped InAlN alloys

P. D. C. King; T. D. Veal; A. Adikimenakis; Hai Lu; L. R. Bailey; E. Iliopoulos; A. Georgakilas; W. J. Schaff; C. F. McConville

doi:10.1063/1.2913765

Surface electronic properties of undoped InAlN alloys

P. D. C. King, T. D. Veal, A. Adikimenakis, Hai Lu, L. R. Bailey, E. Iliopoulos, A. Georgakilas, W. J. Schaff, C. F. McConville

Research output: Contribution to journal › Article › peer-review

Abstract

The variation in surface electronic properties of undoped c-plane InxAl1-xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed. (C) 2008 American Institute of Physics.

Original language	English
Pages (from-to)	172105
Number of pages	3
Journal	Applied Physics Letters
Volume	92
Issue number	17
DOIs	https://doi.org/10.1063/1.2913765
Publication status	Published - 28 Apr 2008

Keywords

BAND OFFSETS
ACCUMULATION
INN
INTERFACE
LAYERS
GAP

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10.1063/1.2913765

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title = "Surface electronic properties of undoped InAlN alloys",

abstract = "The variation in surface electronic properties of undoped c-plane InxAl1-xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed. (C) 2008 American Institute of Physics.",

keywords = "BAND OFFSETS, ACCUMULATION, INN, INTERFACE, LAYERS, GAP",

author = "King, {P. D. C.} and Veal, {T. D.} and A. Adikimenakis and Hai Lu and Bailey, {L. R.} and E. Iliopoulos and A. Georgakilas and Schaff, {W. J.} and McConville, {C. F.}",

year = "2008",

month = apr,

day = "28",

doi = "10.1063/1.2913765",

language = "English",

volume = "92",

pages = "172105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

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TY - JOUR

T1 - Surface electronic properties of undoped InAlN alloys

AU - King, P. D. C.

AU - Veal, T. D.

AU - Adikimenakis, A.

AU - Lu, Hai

AU - Bailey, L. R.

AU - Iliopoulos, E.

AU - Georgakilas, A.

AU - Schaff, W. J.

AU - McConville, C. F.

PY - 2008/4/28

Y1 - 2008/4/28

N2 - The variation in surface electronic properties of undoped c-plane InxAl1-xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed. (C) 2008 American Institute of Physics.

AB - The variation in surface electronic properties of undoped c-plane InxAl1-xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed. (C) 2008 American Institute of Physics.

KW - BAND OFFSETS

KW - ACCUMULATION

KW - INN

KW - INTERFACE

KW - LAYERS

KW - GAP

U2 - 10.1063/1.2913765

DO - 10.1063/1.2913765

M3 - Article

SN - 0003-6951

VL - 92

SP - 172105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Surface electronic properties of undoped InAlN alloys

Abstract

Keywords

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