Surface electronic properties of undoped InAlN alloys

P. D. C. King, T. D. Veal, A. Adikimenakis, Hai Lu, L. R. Bailey, E. Iliopoulos, A. Georgakilas, W. J. Schaff, C. F. McConville

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

The variation in surface electronic properties of undoped c-plane InxAl1-xN alloys has been investigated across the composition range using a combination of high-resolution x-ray photoemission spectroscopy and single-field Hall effect measurements. For the In-rich alloys, electron accumulation layers, accompanied by a downward band bending, are present at the surface, with a decrease to approximately flatband conditions with increasing Al composition. However, for the Al-rich alloys, the undoped samples were found to be insulating with approximate midgap pinning of the surface Fermi level observed. (C) 2008 American Institute of Physics.

Original languageEnglish
Pages (from-to)172105
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number17
DOIs
Publication statusPublished - 28 Apr 2008

Keywords

  • BAND OFFSETS
  • ACCUMULATION
  • INN
  • INTERFACE
  • LAYERS
  • GAP

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