Surface electronic properties of n- and p-type InGaN alloys

P. D. C. King; T. D. Veal; Hai Lu; P. H. Jefferson; S. A. Hatfield; W. J. Schaff; C. F. McConville

doi:10.1002/pssb.200778452

Surface electronic properties of n- and p-type InGaN alloys

P. D. C. King, T. D. Veal, Hai Lu, P. H. Jefferson, S. A. Hatfield, W. J. Schaff, C. F. McConville

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane InxGa1-xN alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	881-883
Number of pages	3
Journal	Physica Status Solidi. B
Volume	245
Issue number	5
DOIs	https://doi.org/10.1002/pssb.200778452
Publication status	Published - May 2008

Keywords

MOLECULAR-BEAM EPITAXY
ACCUMULATION
INN

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10.1002/pssb.200778452

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title = "Surface electronic properties of n- and p-type InGaN alloys",

abstract = "X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane InxGa1-xN alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

keywords = "MOLECULAR-BEAM EPITAXY, ACCUMULATION, INN",

author = "King, {P. D. C.} and Veal, {T. D.} and Hai Lu and Jefferson, {P. H.} and Hatfield, {S. A.} and Schaff, {W. J.} and McConville, {C. F.}",

year = "2008",

month = may,

doi = "10.1002/pssb.200778452",

language = "English",

volume = "245",

pages = "881--883",

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publisher = "Wiley-VCH, Weinheim",

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TY - JOUR

T1 - Surface electronic properties of n- and p-type InGaN alloys

AU - King, P. D. C.

AU - Veal, T. D.

AU - Lu, Hai

AU - Jefferson, P. H.

AU - Hatfield, S. A.

AU - Schaff, W. J.

AU - McConville, C. F.

PY - 2008/5

Y1 - 2008/5

N2 - X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane InxGa1-xN alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane InxGa1-xN alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - MOLECULAR-BEAM EPITAXY

KW - ACCUMULATION

KW - INN

U2 - 10.1002/pssb.200778452

DO - 10.1002/pssb.200778452

M3 - Article

SN - 0370-1972

VL - 245

SP - 881

EP - 883

JO - Physica Status Solidi. B

JF - Physica Status Solidi. B

IS - 5

ER -

Surface electronic properties of n- and p-type InGaN alloys

Abstract

Keywords

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