Surface electronic properties of n- and p-type InGaN alloys

P. D. C. King, T. D. Veal, Hai Lu, P. H. Jefferson, S. A. Hatfield, W. J. Schaff, C. F. McConville

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


X-ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning across the composition range of n- and p-type c-plane InxGa1-xN alloys. The pinning relative to the charge neutrality level is used to explain a change in band bending direction causing a transition from surface electron accumulation (In rich) to depletion (Ga-rich), at x approximate to 0.43 for n-type alloys and a transition from surface inversion to hole depletion at x approximate to 0.59 for p-type alloys where downward band bending occurs across the composition range. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original languageEnglish
Pages (from-to)881-883
Number of pages3
JournalPhysica Status Solidi. B
Issue number5
Publication statusPublished - May 2008


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