Surface electronic properties of Mg-doped InAlN alloys

High resolution X-ray photomission spectroscopy is utilised - was inferred at an alloy composition of x=0.7. For Al rich to determine the variation in surface Fermi level pinning post - alloys, insulating samples resulted due to the difficulty of tion for Mg-doped c-plane In1Al1, N alloys with x >= 0.4. For p-type doping AlN and Al-rich alloys resulting in approxi-In-rich alloys, a transition from inversion to hole depletion, mately flat-band conditions, with little surface space-charge.