Surface electronic properties of Mg-doped InAlN alloys

P. D. C. King, T. D. Veal, W. J. Schaff, C. F. McConville

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

High resolution X-ray photomission spectroscopy is utilised - was inferred at an alloy composition of x=0.7. For Al rich to determine the variation in surface Fermi level pinning post - alloys, insulating samples resulted due to the difficulty of tion for Mg-doped c-plane In1Al1, N alloys with x >= 0.4. For p-type doping AlN and Al-rich alloys resulting in approxi-In-rich alloys, a transition from inversion to hole depletion, mately flat-band conditions, with little surface space-charge.

Original languageEnglish
Pages (from-to)1169-1172
Number of pages4
JournalPhysica Status Solidi. B
Volume246
Issue number6
DOIs
Publication statusPublished - Jun 2009

Keywords

  • INGAN
  • INN

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