Surface electron accumulation and the charge neutrality level in In2O3

Phil King, T. D. Veal, D. J. Payne, A. Bourlange, R. G. Egdell, C. F. McConville

Research output: Contribution to journalArticlepeer-review

244 Citations (Scopus)

Abstract

High-resolution x-ray photoemission spectroscopy, infrared reflectivity and Hall effect measurements, combined with surface space-charge calculations, are used to show that electron accumulation occurs at the surface of undoped single-crystalline In2O3. From a combination of measurements performed on undoped and heavily Sn-doped samples, the charge neutrality level is shown to lie similar to 0.4 eV above the conduction band minimum in In2O3, explaining the electron accumulation at the surface of undoped material, the propensity for n-type conductivity, and the ease of n-type doping in In2O3, and hence its use as a transparent conducting oxide material.

Original languageEnglish
Pages (from-to)116808
Number of pages4
JournalPhysical Review Letters
Volume101
Issue number11
DOIs
Publication statusPublished - 12 Sept 2008

Keywords

  • OPTICAL-PROPERTIES
  • OXIDE
  • SEMICONDUCTORS
  • TEMPERATURE
  • TRANSPARENT
  • FILMS

Fingerprint

Dive into the research topics of 'Surface electron accumulation and the charge neutrality level in In2O3'. Together they form a unique fingerprint.

Cite this