Surface, bulk, and interface electronic properties of nonpolar InN

W. M. Linhart, T. D. Veal, P. D. C. King, G. Koblmueller, C. S. Gallinat, J. S. Speck, C. F. McConville

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

The electronic properties of a-plane and m-plane InN have been investigated by x-ray photoemission spectroscopy, infrared reflectivity, and surface space-charge calculations. Electron accumulation has been observed at the surface of nonpolar InN and the surface Fermi level has been found to be lower than previously observed on InN samples. A high electron density in the InN close to the interface with GaN was found in each nonpolar InN sample. (c) 2010 American Institute of Physics. [doi:10.1063/1.3488821]

Original languageEnglish
Pages (from-to)112103
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number11
DOIs
Publication statusPublished - 13 Sept 2010

Keywords

  • electronic density of states
  • Fermi level
  • III-V semiconductors
  • indium compounds
  • infrared spectra
  • interface states
  • reflectivity
  • semiconductor thin films
  • space charge
  • surface states
  • wide band gap semiconductors
  • X-ray photoelectron spectra
  • MOLECULAR-BEAM EPITAXY
  • POLAR
  • GAN

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