Surface, bulk, and interface electronic properties of nonpolar InN

W. M. Linhart; T. D. Veal; P. D. C. King; G. Koblmueller; C. S. Gallinat; J. S. Speck; C. F. McConville

doi:10.1063/1.3488821

Surface, bulk, and interface electronic properties of nonpolar InN

W. M. Linhart, T. D. Veal, P. D. C. King, G. Koblmueller, C. S. Gallinat, J. S. Speck, C. F. McConville

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Abstract

The electronic properties of a-plane and m-plane InN have been investigated by x-ray photoemission spectroscopy, infrared reflectivity, and surface space-charge calculations. Electron accumulation has been observed at the surface of nonpolar InN and the surface Fermi level has been found to be lower than previously observed on InN samples. A high electron density in the InN close to the interface with GaN was found in each nonpolar InN sample. (c) 2010 American Institute of Physics. [doi:10.1063/1.3488821]

Original language	English
Pages (from-to)	112103
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	11
DOIs	https://doi.org/10.1063/1.3488821
Publication status	Published - 13 Sept 2010

Keywords

electronic density of states
Fermi level
III-V semiconductors
indium compounds
infrared spectra
interface states
reflectivity
semiconductor thin films
space charge
surface states
wide band gap semiconductors
X-ray photoelectron spectra
MOLECULAR-BEAM EPITAXY
POLAR
GAN

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10.1063/1.3488821

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title = "Surface, bulk, and interface electronic properties of nonpolar InN",

abstract = "The electronic properties of a-plane and m-plane InN have been investigated by x-ray photoemission spectroscopy, infrared reflectivity, and surface space-charge calculations. Electron accumulation has been observed at the surface of nonpolar InN and the surface Fermi level has been found to be lower than previously observed on InN samples. A high electron density in the InN close to the interface with GaN was found in each nonpolar InN sample. (c) 2010 American Institute of Physics. [doi:10.1063/1.3488821]",

keywords = "electronic density of states, Fermi level, III-V semiconductors, indium compounds, infrared spectra, interface states, reflectivity, semiconductor thin films, space charge, surface states, wide band gap semiconductors, X-ray photoelectron spectra, MOLECULAR-BEAM EPITAXY, POLAR, GAN",

author = "Linhart, {W. M.} and Veal, {T. D.} and King, {P. D. C.} and G. Koblmueller and Gallinat, {C. S.} and Speck, {J. S.} and McConville, {C. F.}",

year = "2010",

month = sep,

day = "13",

doi = "10.1063/1.3488821",

language = "English",

volume = "97",

pages = "112103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Surface, bulk, and interface electronic properties of nonpolar InN

AU - Linhart, W. M.

AU - Veal, T. D.

AU - King, P. D. C.

AU - Koblmueller, G.

AU - Gallinat, C. S.

AU - Speck, J. S.

AU - McConville, C. F.

PY - 2010/9/13

Y1 - 2010/9/13

N2 - The electronic properties of a-plane and m-plane InN have been investigated by x-ray photoemission spectroscopy, infrared reflectivity, and surface space-charge calculations. Electron accumulation has been observed at the surface of nonpolar InN and the surface Fermi level has been found to be lower than previously observed on InN samples. A high electron density in the InN close to the interface with GaN was found in each nonpolar InN sample. (c) 2010 American Institute of Physics. [doi:10.1063/1.3488821]

AB - The electronic properties of a-plane and m-plane InN have been investigated by x-ray photoemission spectroscopy, infrared reflectivity, and surface space-charge calculations. Electron accumulation has been observed at the surface of nonpolar InN and the surface Fermi level has been found to be lower than previously observed on InN samples. A high electron density in the InN close to the interface with GaN was found in each nonpolar InN sample. (c) 2010 American Institute of Physics. [doi:10.1063/1.3488821]

KW - electronic density of states

KW - Fermi level

KW - III-V semiconductors

KW - indium compounds

KW - infrared spectra

KW - interface states

KW - reflectivity

KW - semiconductor thin films

KW - space charge

KW - surface states

KW - wide band gap semiconductors

KW - X-ray photoelectron spectra

KW - MOLECULAR-BEAM EPITAXY

KW - POLAR

KW - GAN

U2 - 10.1063/1.3488821

DO - 10.1063/1.3488821

M3 - Article

SN - 0003-6951

VL - 97

SP - 112103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Surface, bulk, and interface electronic properties of nonpolar InN

Abstract

Keywords

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