Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers

P. D. C. King, T. D. Veal, C. F. McConville, J. Zuniga-Perez, V. Munoz-Sanjose, M. Hopkinson, E. D. L. Rienks, M. Fuglsang Jensen, Ph. Hofmann

Research output: Contribution to journalArticlepeer-review

87 Citations (Scopus)

Abstract

An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.

Original languageEnglish
Pages (from-to)256803
Number of pages4
JournalPhysical Review Letters
Volume104
Issue number25
DOIs
Publication statusPublished - 24 Jun 2010

Keywords

  • RENORMALIZATION
  • SYSTEMS
  • LEVEL
  • INAS
  • INN

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