Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots

J. Treu; C. Schneider; A. Huggenberger; T. Braun; S. Reitzenstein; Sven Höfling; M. Kamp

doi:10.1063/1.4733664

Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots

J. Treu^*, C. Schneider, A. Huggenberger, T. Braun, S. Reitzenstein, Sven Höfling, M. Kamp

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We present a comparative investigation of the fine structure splitting (FSS) from self-organized In(Ga)As quantum dots (QDs) grown on GaAs substrates with different lattice orientations. QDs grown on (111) B-and (112) oriented substrates are analyzed and compared to small QDs on commonly used (001) substrates. Mean values for the FSS as low as (5.6 +/- 0.6) mu eV are obtained for QDs on (111) B-GaAs, comparing favorably to the other two approaches ((11.8 +/- 1.7) mu eV for (112)-surfaces and (14.0 +/- 2.2) mu eV for (001)-surfaces). Single photon emission from (111) B QDs grown by droplet epitaxy is demonstrated via photon autocorrelation studies with a g((2))(0) value of 0.07. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733664]

Original language	English
Article number	022102
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	2
DOIs	https://doi.org/10.1063/1.4733664
Publication status	Published - 9 Jul 2012

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10.1063/1.4733664

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title = "Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots",

abstract = "We present a comparative investigation of the fine structure splitting (FSS) from self-organized In(Ga)As quantum dots (QDs) grown on GaAs substrates with different lattice orientations. QDs grown on (111) B-and (112) oriented substrates are analyzed and compared to small QDs on commonly used (001) substrates. Mean values for the FSS as low as (5.6 +/- 0.6) mu eV are obtained for QDs on (111) B-GaAs, comparing favorably to the other two approaches ((11.8 +/- 1.7) mu eV for (112)-surfaces and (14.0 +/- 2.2) mu eV for (001)-surfaces). Single photon emission from (111) B QDs grown by droplet epitaxy is demonstrated via photon autocorrelation studies with a g((2))(0) value of 0.07. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733664]",

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T1 - Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots

AU - Treu, J.

AU - Schneider, C.

AU - Huggenberger, A.

AU - Braun, T.

AU - Reitzenstein, S.

AU - Höfling, Sven

AU - Kamp, M.

PY - 2012/7/9

Y1 - 2012/7/9

N2 - We present a comparative investigation of the fine structure splitting (FSS) from self-organized In(Ga)As quantum dots (QDs) grown on GaAs substrates with different lattice orientations. QDs grown on (111) B-and (112) oriented substrates are analyzed and compared to small QDs on commonly used (001) substrates. Mean values for the FSS as low as (5.6 +/- 0.6) mu eV are obtained for QDs on (111) B-GaAs, comparing favorably to the other two approaches ((11.8 +/- 1.7) mu eV for (112)-surfaces and (14.0 +/- 2.2) mu eV for (001)-surfaces). Single photon emission from (111) B QDs grown by droplet epitaxy is demonstrated via photon autocorrelation studies with a g((2))(0) value of 0.07. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733664]

AB - We present a comparative investigation of the fine structure splitting (FSS) from self-organized In(Ga)As quantum dots (QDs) grown on GaAs substrates with different lattice orientations. QDs grown on (111) B-and (112) oriented substrates are analyzed and compared to small QDs on commonly used (001) substrates. Mean values for the FSS as low as (5.6 +/- 0.6) mu eV are obtained for QDs on (111) B-GaAs, comparing favorably to the other two approaches ((11.8 +/- 1.7) mu eV for (112)-surfaces and (14.0 +/- 2.2) mu eV for (001)-surfaces). Single photon emission from (111) B QDs grown by droplet epitaxy is demonstrated via photon autocorrelation studies with a g((2))(0) value of 0.07. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733664]

KW - ENTANGLED PHOTONS

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DO - 10.1063/1.4733664

M3 - Article

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022102

ER -

Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots

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