Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots

J. Treu*, C. Schneider, A. Huggenberger, T. Braun, S. Reitzenstein, Sven Höfling, M. Kamp

*Corresponding author for this work

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23 Citations (Scopus)

Abstract

We present a comparative investigation of the fine structure splitting (FSS) from self-organized In(Ga)As quantum dots (QDs) grown on GaAs substrates with different lattice orientations. QDs grown on (111) B-and (112) oriented substrates are analyzed and compared to small QDs on commonly used (001) substrates. Mean values for the FSS as low as (5.6 +/- 0.6) mu eV are obtained for QDs on (111) B-GaAs, comparing favorably to the other two approaches ((11.8 +/- 1.7) mu eV for (112)-surfaces and (14.0 +/- 2.2) mu eV for (001)-surfaces). Single photon emission from (111) B QDs grown by droplet epitaxy is demonstrated via photon autocorrelation studies with a g((2))(0) value of 0.07. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733664]

Original languageEnglish
Article number022102
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number2
DOIs
Publication statusPublished - 9 Jul 2012

Keywords

  • ENTANGLED PHOTONS

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