TY - JOUR
T1 - Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range
AU - Dyksik, Mateusz
AU - Motyka, Marcin
AU - Sek, Grzegorz
AU - Misiewicz, Jan
AU - Dallner, Matthias
AU - Weih, Robert
AU - Kamp, Martin
AU - Höfling, Sven
N1 - The work has been supported by Project Widelase (No. 318798) of the 7-th Framework Program of the European Commission.
Date of Acceptance: 06/10/2015
PY - 2015/10/15
Y1 - 2015/10/15
N2 - The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.
AB - The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.
KW - Spatially resolved photoluminescence
KW - Type II quantum wells
KW - Mid-infrared
KW - Fourier transform spectroscopy
KW - Interband cascade lasers
U2 - 10.1186/s11671-015-1104-z
DO - 10.1186/s11671-015-1104-z
M3 - Article
SN - 1556-276X
VL - 10
SP - 1
EP - 7
JO - Nanoscale research letters
JF - Nanoscale research letters
M1 - 402
ER -