Submonolayer uniformity of type II InAs/GaInSb W-shaped quantum wells probed by full-wafer photoluminescence mapping in the mid-infrared spectral range

Mateusz Dyksik*, Marcin Motyka, Grzegorz Sek, Jan Misiewicz, Matthias Dallner, Robert Weih, Martin Kamp, Sven Höfling

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)
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Abstract

The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth.

Original languageEnglish
Article number402
Pages (from-to)1-7
Number of pages7
JournalNanoscale research letters
Volume10
DOIs
Publication statusPublished - 15 Oct 2015

Keywords

  • Spatially resolved photoluminescence
  • Type II quantum wells
  • Mid-infrared
  • Fourier transform spectroscopy
  • Interband cascade lasers

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