Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing

M. Miyake, J. F. Scott, X. J. Lou, F. D. Morrison, T. Nonaka, S. Motoyama, T. Tatsuta, O. Tsuji

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

We report conformal deposition of both RuO2 electrodes and PbZrxTi1-xO3 (PZT) capacitors in submicron Si trenches through the same in situ liquid source mist processing. The step coverage for the RuO2 electrodes is 75% at 225 degrees C. After electroding, we deposited Pb(Zr,Ti)O-3 thin films and nanotubes using the same apparatus with remanent polarization of similar to 15 mu C/cm(2). The step coverage was 59% on the sidewall and 79% on the bottom wall. Electrical testing showed charge storage (capacitance/trench) was 13 +/- 2 pF, with a breakdown voltage of 11.3 +/- 0.2 V and dielectric constant epsilon = 166 +/- 30. This shows that a single inexpensive processing can produce fully electroded dynamic random access memory trenched capacitors with high aspect ratios and commercial electrical performance. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.2981197]

Original languageEnglish
Article number064112
Number of pages7
JournalJournal of Applied Physics
Volume104
Issue number6
DOIs
Publication statusPublished - 15 Sept 2008

Keywords

  • CHEMICAL-VAPOR-DEPOSITION
  • PB(ZR,TI)O-3 THIN-FILMS
  • STRUCTURAL-PROPERTIES
  • STEP COVERAGE
  • MOCVD
  • IMPROVEMENT
  • NANOTUBES
  • PRECURSOR
  • GROWTH
  • OXIDE

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