Sub-Picosecond Processes of Ferroelectric Domain Switching from Field and Temperature Experiments

An Quan Jiang*, Hyun Ju Lee, Cheol Seong Hwang, James F. Scott

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)

Abstract

After calculations of various domain-switching current transients under the pulse from electrical circuit parameters, the field dependence of domain-switching speeds is accurately estimated over five orders of magnitude in a wide temperature range of 5.4-280 K from the height of domain-switching current in Pb(Zr0.4Ti0.6)O-3 thin films. These estimations are extended following Merz's equation [W. J. Merz, Phys. Rev. 1954, 95, 690] and an ultimate domain-switching current density of 1.4 x 10(8) A cm(-1) is extracted at the highest field of 0.20 MV cm(-1). From classical domain-nucleation models with thermal fluctuations, an ultimate (asymptotic high-field) nucleation time of 0.47 ps is derived when the domain sideways motion is kink-nucleation-rate limited.

Original languageEnglish
Pages (from-to)192-199
Number of pages8
JournalAdvanced Functional Materials
Volume22
Issue number1
DOIs
Publication statusPublished - 11 Jan 2012

Keywords

  • STRUCTURAL PHASE-TRANSITIONS
  • LEAD-ZIRCONATE-TITANATE
  • THIN-FILM CAPACITORS
  • POLARIZATION REVERSAL
  • BARIUM-TITANATE
  • SIDEWISE MOTION
  • BATIO3
  • WALLS
  • PB(ZR,TI)O-3
  • NUCLEATION

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