Study of Ho-doped Bi2Te3 topological insulator thin films

S. E. Harrison, Liam James Collins-McIntyre, S. L. Zhang, A. A. Baker, A. I. Figueroa, A. J. Kellock, A. Pushp, Y. L. Chen, S. S. P. Parkin, J. S. Harris, G. van der Laan, T. Hesjedal*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi2Te3 thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2 K with an effective magnetic moment of ∼5 μB/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material's paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.

Original languageEnglish
Article number182406
Number of pages5
JournalApplied Physics Letters
Volume107
Issue number18
DOIs
Publication statusPublished - 2 Nov 2015

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