Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films

Rajesh K. Katiyar; Yogesh Sharma; Pankaj Misra; Venkata S. Puli; Satyaprakash Sahoo; Ashok Kumar; James F. Scott; Gerardo Morell; Brad R. Weiner; Ram S. Katiyar

doi:10.1063/1.4900755

Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films

Rajesh K. Katiyar^*, Yogesh Sharma, Pankaj Misra, Venkata S. Puli, Satyaprakash Sahoo, Ashok Kumar, James F. Scott, Gerardo Morell, Brad R. Weiner, Ram S. Katiyar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

We report the photovoltaic properties of doped ferroelectric [Bi0.9La0.1][Fe0.97Ti0.02Zr0.01]O-3 (BLFTZO) thin films. Polycrystalline BLFTZO films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. Al-doped ZnO transparent top electrodes complete the ZnO:Al/BLFTZO/Pt metal-ferroelectric-metal capacitor structures. BLFTZO showed switchable photoresponse in both polarities. The open circuit voltage (V-OC) and short circuit current (J(SC)) were found to be similar to 0.022V and similar to 650 mu A/cm(2), respectively after positive poling, whereas significant difference in V-OC similar to 0.018V and J(SC) similar to 700 mu A/cm(2) was observed after negative poling. The observed switchable photocurrent and photovoltage responses are explained on the basis of polarization flipping in BLFTZO due to the applied poling field. (C) 2014 AIP Publishing LLC.

Original language	English
Article number	172904
Number of pages	4
Journal	Applied Physics Letters
Volume	105
Issue number	17
DOIs	https://doi.org/10.1063/1.4900755
Publication status	Published - 27 Oct 2014

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@article{8f72e005eb0c49bfbd4086a892e25032,

title = "Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films",

abstract = "We report the photovoltaic properties of doped ferroelectric [Bi0.9La0.1][Fe0.97Ti0.02Zr0.01]O-3 (BLFTZO) thin films. Polycrystalline BLFTZO films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. Al-doped ZnO transparent top electrodes complete the ZnO:Al/BLFTZO/Pt metal-ferroelectric-metal capacitor structures. BLFTZO showed switchable photoresponse in both polarities. The open circuit voltage (V-OC) and short circuit current (J(SC)) were found to be similar to 0.022V and similar to 650 mu A/cm(2), respectively after positive poling, whereas significant difference in V-OC similar to 0.018V and J(SC) similar to 700 mu A/cm(2) was observed after negative poling. The observed switchable photocurrent and photovoltage responses are explained on the basis of polarization flipping in BLFTZO due to the applied poling field. (C) 2014 AIP Publishing LLC.",

author = "Katiyar, {Rajesh K.} and Yogesh Sharma and Pankaj Misra and Puli, {Venkata S.} and Satyaprakash Sahoo and Ashok Kumar and Scott, {James F.} and Gerardo Morell and Weiner, {Brad R.} and Katiyar, {Ram S.}",

year = "2014",

month = oct,

day = "27",

doi = "10.1063/1.4900755",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films

AU - Katiyar, Rajesh K.

AU - Sharma, Yogesh

AU - Misra, Pankaj

AU - Puli, Venkata S.

AU - Sahoo, Satyaprakash

AU - Kumar, Ashok

AU - Scott, James F.

AU - Morell, Gerardo

AU - Weiner, Brad R.

AU - Katiyar, Ram S.

PY - 2014/10/27

Y1 - 2014/10/27

N2 - We report the photovoltaic properties of doped ferroelectric [Bi0.9La0.1][Fe0.97Ti0.02Zr0.01]O-3 (BLFTZO) thin films. Polycrystalline BLFTZO films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. Al-doped ZnO transparent top electrodes complete the ZnO:Al/BLFTZO/Pt metal-ferroelectric-metal capacitor structures. BLFTZO showed switchable photoresponse in both polarities. The open circuit voltage (V-OC) and short circuit current (J(SC)) were found to be similar to 0.022V and similar to 650 mu A/cm(2), respectively after positive poling, whereas significant difference in V-OC similar to 0.018V and J(SC) similar to 700 mu A/cm(2) was observed after negative poling. The observed switchable photocurrent and photovoltage responses are explained on the basis of polarization flipping in BLFTZO due to the applied poling field. (C) 2014 AIP Publishing LLC.

AB - We report the photovoltaic properties of doped ferroelectric [Bi0.9La0.1][Fe0.97Ti0.02Zr0.01]O-3 (BLFTZO) thin films. Polycrystalline BLFTZO films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition technique. Al-doped ZnO transparent top electrodes complete the ZnO:Al/BLFTZO/Pt metal-ferroelectric-metal capacitor structures. BLFTZO showed switchable photoresponse in both polarities. The open circuit voltage (V-OC) and short circuit current (J(SC)) were found to be similar to 0.022V and similar to 650 mu A/cm(2), respectively after positive poling, whereas significant difference in V-OC similar to 0.018V and J(SC) similar to 700 mu A/cm(2) was observed after negative poling. The observed switchable photocurrent and photovoltage responses are explained on the basis of polarization flipping in BLFTZO due to the applied poling field. (C) 2014 AIP Publishing LLC.

U2 - 10.1063/1.4900755

DO - 10.1063/1.4900755

M3 - Article

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172904

ER -

Studies of the switchable photovoltaic effect in co-substituted BiFeO3 thin films

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