Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Eun-Hye Lee; Jin-Dong Song; Il-Ki Han; Soo-Kyung Chang; Fabian Langer; Sven Höfling; Alfred Forchel; Martin Kamp; Jong-Su Kim

doi:10.1186/s11671-015-0826-2

Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Eun-Hye Lee
, Jin-Dong Song
, Il-Ki Han
, Soo-Kyung Chang
, Fabian Langer
, Sven Höfling
, Alfred Forchel
, Martin Kamp
, Jong-Su Kim

Research output: Contribution to journal › Article › peer-review

Abstract

The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

Original language	English
Journal	Nanoscale research letters
Volume	10
DOIs	https://doi.org/10.1186/s11671-015-0826-2
Publication status	Published - 10 Mar 2015

Keywords

Quantum dot
Droplet epitaxy
Micro-photoluminescence
Single photon
GaAs

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10.1186/s11671-015-0826-2

Hofling_2015_NRL_StructuralOptical_CCBY
Copyright © Lee et al.; licensee Springer. 2015. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited.
Final published version, 892 KBLicence: CC BY

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Lee, E.-H., Song, J.-D., Han, I.-K., Chang, S.-K., Langer, F., Höfling, S., Forchel, A., Kamp, M., & Kim, J.-S. (2015). Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling. Nanoscale research letters, 10. https://doi.org/10.1186/s11671-015-0826-2

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abstract = "The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.",

keywords = "Quantum dot, Droplet epitaxy, Micro-photoluminescence, Single photon, GaAs",

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T1 - Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

AU - Lee, Eun-Hye

AU - Song, Jin-Dong

AU - Han, Il-Ki

AU - Chang, Soo-Kyung

AU - Langer, Fabian

AU - Höfling, Sven

AU - Forchel, Alfred

AU - Kamp, Martin

AU - Kim, Jong-Su

PY - 2015/3/10

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N2 - The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

AB - The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.

KW - Quantum dot

KW - Droplet epitaxy

KW - Micro-photoluminescence

KW - Single photon

KW - GaAs

U2 - 10.1186/s11671-015-0826-2

DO - 10.1186/s11671-015-0826-2

M3 - Article

SN - 1931-7573

VL - 10

JO - Nanoscale research letters

JF - Nanoscale research letters

ER -

Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

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