Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling

Eun-Hye Lee, Jin-Dong Song, Il-Ki Han, Soo-Kyung Chang, Fabian Langer, Sven Höfling, Alfred Forchel, Martin Kamp, Jong-Su Kim

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm2), was directly observed on the surface of a 45-nm-thick Al0.3Ga0.7As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
Original languageEnglish
JournalNanoscale research letters
Volume10
DOIs
Publication statusPublished - 10 Mar 2015

Keywords

  • Quantum dot
  • Droplet epitaxy
  • Micro-photoluminescence
  • Single photon
  • GaAs

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