Strong coupling in a quantum dot micropillar system under electrical current injection

C. Kistner; K. Morgener; S. Reitzenstein; C. Schneider; Sven Höfling; L. Worschech; A. Forchel; P. Yao; S. Hughes

doi:10.1063/1.3442912

Strong coupling in a quantum dot micropillar system under electrical current injection

C. Kistner^*, K. Morgener, S. Reitzenstein, C. Schneider, Sven Höfling, L. Worschech, A. Forchel, P. Yao, S. Hughes

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Integrating In(0.3)Ga(0.7)As quantum dots (QDs) featuring a high oscillator strength into a high quality electrically contacted micropillar cavity enabled us to realize strong coupling under electrical carrier injection. In the micropillar cavity with a quality factor of 10 000 and a diameter of 1.9 mu m, a vacuum Rabi splitting of 108 mu eV was observed when an electrically excited QD exciton was tuned through resonance with the fundamental cavity mode by varying the temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3442912]

Original language	English
Article number	221102
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3442912
Publication status	Published - 31 May 2010

Keywords

excitons
gallium arsenide
III-V semiconductors
indium compounds
oscillator strengths
Q-factor
semiconductor quantum dots
NANOCAVITY
LASER

Access to Document

10.1063/1.3442912

Cite this

@article{394f688be89d4eb18def3548b31f4104,

title = "Strong coupling in a quantum dot micropillar system under electrical current injection",

abstract = "Integrating In(0.3)Ga(0.7)As quantum dots (QDs) featuring a high oscillator strength into a high quality electrically contacted micropillar cavity enabled us to realize strong coupling under electrical carrier injection. In the micropillar cavity with a quality factor of 10 000 and a diameter of 1.9 mu m, a vacuum Rabi splitting of 108 mu eV was observed when an electrically excited QD exciton was tuned through resonance with the fundamental cavity mode by varying the temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3442912]",

keywords = "excitons, gallium arsenide, III-V semiconductors, indium compounds, oscillator strengths, Q-factor, semiconductor quantum dots, NANOCAVITY, LASER",

author = "C. Kistner and K. Morgener and S. Reitzenstein and C. Schneider and Sven H{\"o}fling and L. Worschech and A. Forchel and P. Yao and S. Hughes",

year = "2010",

month = may,

day = "31",

doi = "10.1063/1.3442912",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Strong coupling in a quantum dot micropillar system under electrical current injection

AU - Kistner, C.

AU - Morgener, K.

AU - Reitzenstein, S.

AU - Schneider, C.

AU - Höfling, Sven

AU - Worschech, L.

AU - Forchel, A.

AU - Yao, P.

AU - Hughes, S.

PY - 2010/5/31

Y1 - 2010/5/31

N2 - Integrating In(0.3)Ga(0.7)As quantum dots (QDs) featuring a high oscillator strength into a high quality electrically contacted micropillar cavity enabled us to realize strong coupling under electrical carrier injection. In the micropillar cavity with a quality factor of 10 000 and a diameter of 1.9 mu m, a vacuum Rabi splitting of 108 mu eV was observed when an electrically excited QD exciton was tuned through resonance with the fundamental cavity mode by varying the temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3442912]

AB - Integrating In(0.3)Ga(0.7)As quantum dots (QDs) featuring a high oscillator strength into a high quality electrically contacted micropillar cavity enabled us to realize strong coupling under electrical carrier injection. In the micropillar cavity with a quality factor of 10 000 and a diameter of 1.9 mu m, a vacuum Rabi splitting of 108 mu eV was observed when an electrically excited QD exciton was tuned through resonance with the fundamental cavity mode by varying the temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3442912]

KW - excitons

KW - gallium arsenide

KW - III-V semiconductors

KW - indium compounds

KW - oscillator strengths

KW - Q-factor

KW - semiconductor quantum dots

KW - NANOCAVITY

KW - LASER

U2 - 10.1063/1.3442912

DO - 10.1063/1.3442912

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 221102

ER -

Strong coupling in a quantum dot micropillar system under electrical current injection

Abstract

Keywords

Access to Document

Fingerprint

Cite this