Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena

S I  Budzulyak; A E  Gorin; V M  Ermakov; V V  Kolomoets; E F  Venger; P  Verma; M  Yamada; E  Liarokapis; D P  Tunstall

Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena

S I Budzulyak, A E Gorin, V M Ermakov, V V Kolomoets, E F Venger, P Verma, M Yamada, E Liarokapis, D P Tunstall

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

The analysis of experimental data on the pressure and temperature dependences of conductivity, the current-voltage characteristics (IVC), and the pressure dependence of the activation energy in n-Si and n-Ge crystals in the region of strain-induced metal-insulator transition (MIT) is presented. A remarkable change of the effective mass of carriers in semiconductors caused by strain-induced transformation of the energy band structure is the main necessary condition for realization of this kind of metal-nonmetal transition.

Original language	English
Pages (from-to)	519-523
Number of pages	5
Journal	Physica Status Solidi. B
Volume	223
Publication status	Published - Jan 2001

Keywords

METAL-INSULATOR-TRANSITION

Cite this

@article{686c7c235a26463eb4042e97d37fda27,

title = "Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena",

abstract = "The analysis of experimental data on the pressure and temperature dependences of conductivity, the current-voltage characteristics (IVC), and the pressure dependence of the activation energy in n-Si and n-Ge crystals in the region of strain-induced metal-insulator transition (MIT) is presented. A remarkable change of the effective mass of carriers in semiconductors caused by strain-induced transformation of the energy band structure is the main necessary condition for realization of this kind of metal-nonmetal transition.",

keywords = "METAL-INSULATOR-TRANSITION",

author = "Budzulyak, \{S I\} and Gorin, \{A E\} and Ermakov, \{V M\} and Kolomoets, \{V V\} and Venger, \{E F\} and P Verma and M Yamada and E Liarokapis and Tunstall, \{D P\}",

year = "2001",

month = jan,

language = "English",

volume = "223",

pages = "519--523",

journal = "Physica Status Solidi. B",

issn = "0370-1972",

publisher = "John Wiley \& Sons, Ltd",

}

TY - JOUR

T1 - Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena

AU - Budzulyak, S I

AU - Gorin, A E

AU - Ermakov, V M

AU - Kolomoets, V V

AU - Venger, E F

AU - Verma, P

AU - Yamada, M

AU - Liarokapis, E

AU - Tunstall, D P

PY - 2001/1

Y1 - 2001/1

N2 - The analysis of experimental data on the pressure and temperature dependences of conductivity, the current-voltage characteristics (IVC), and the pressure dependence of the activation energy in n-Si and n-Ge crystals in the region of strain-induced metal-insulator transition (MIT) is presented. A remarkable change of the effective mass of carriers in semiconductors caused by strain-induced transformation of the energy band structure is the main necessary condition for realization of this kind of metal-nonmetal transition.

AB - The analysis of experimental data on the pressure and temperature dependences of conductivity, the current-voltage characteristics (IVC), and the pressure dependence of the activation energy in n-Si and n-Ge crystals in the region of strain-induced metal-insulator transition (MIT) is presented. A remarkable change of the effective mass of carriers in semiconductors caused by strain-induced transformation of the energy band structure is the main necessary condition for realization of this kind of metal-nonmetal transition.

KW - METAL-INSULATOR-TRANSITION

UR - https://www.scopus.com/pages/publications/0035530595

M3 - Article

SN - 0370-1972

VL - 223

SP - 519

EP - 523

JO - Physica Status Solidi. B

JF - Physica Status Solidi. B

ER -

Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena

Abstract

Keywords

Other files and links

Fingerprint

Cite this