Abstract
The analysis of experimental data on the pressure and temperature dependences of conductivity, the current-voltage characteristics (IVC), and the pressure dependence of the activation energy in n-Si and n-Ge crystals in the region of strain-induced metal-insulator transition (MIT) is presented. A remarkable change of the effective mass of carriers in semiconductors caused by strain-induced transformation of the energy band structure is the main necessary condition for realization of this kind of metal-nonmetal transition.
Original language | English |
---|---|
Pages (from-to) | 519-523 |
Number of pages | 5 |
Journal | Physica Status Solidi. B |
Volume | 223 |
Publication status | Published - Jan 2001 |
Keywords
- METAL-INSULATOR-TRANSITION