Strain-induced MI transition in n-Si and n-Ge: Physical mechanisms and transport phenomena

S I Budzulyak, A E Gorin, V M Ermakov, V V Kolomoets, E F Venger, P Verma, M Yamada, E Liarokapis, D P Tunstall

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The analysis of experimental data on the pressure and temperature dependences of conductivity, the current-voltage characteristics (IVC), and the pressure dependence of the activation energy in n-Si and n-Ge crystals in the region of strain-induced metal-insulator transition (MIT) is presented. A remarkable change of the effective mass of carriers in semiconductors caused by strain-induced transformation of the energy band structure is the main necessary condition for realization of this kind of metal-nonmetal transition.

Original languageEnglish
Pages (from-to)519-523
Number of pages5
JournalPhysica Status Solidi. B
Volume223
Publication statusPublished - Jan 2001

Keywords

  • METAL-INSULATOR-TRANSITION

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