Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

C.D. Yerino; P.J. Simmonds; B. Liang; D. Jung; C. Schneider; S. Unsleber; M. Vo; D.L. Huffaker; S. Höfling; M. Kamp; M.L. Lee

doi:10.1063/1.4904944

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

C.D. Yerino, P.J. Simmonds, B. Liang, D. Jung, C. Schneider, S. Unsleber, M. Vo, D.L. Huffaker, S. Höfling, M. Kamp, M.L. Lee

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Abstract

Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

Original language	English
Journal	Applied Physics Letters
Volume	105
Issue number	25
DOIs	https://doi.org/10.1063/1.4904944
Publication status	Published - 22 Dec 2014

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Hofling_2014_APL_Strain
Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in: Yerino, C. D., Simmonds, P. J., Liang, B., Jung, D., Schneider, C., Unsleber, S., Vo, M., Huffaker, D. L., Höfling, S., Kamp, M., & Lee, M. L. (2014). Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting. Applied Physics Letters, 105(25), and may be found at http://dx.doi.org/10.1063/1.4904944
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@article{3cab0ce197a84cd1b99e41c655990d41,

title = "Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting",

abstract = "Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.",

author = "C.D. Yerino and P.J. Simmonds and B. Liang and D. Jung and C. Schneider and S. Unsleber and M. Vo and D.L. Huffaker and S. H{\"o}fling and M. Kamp and M.L. Lee",

note = "C.D.Y. acknowledges support from the Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under Contract No. DE-AC05-06OR23100. Additional support was provided by the University of California Lab Fees Research Program (Grant No. 12-LR-238568). ",

year = "2014",

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day = "22",

doi = "10.1063/1.4904944",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

AU - Yerino, C.D.

AU - Simmonds, P.J.

AU - Liang, B.

AU - Jung, D.

AU - Schneider, C.

AU - Unsleber, S.

AU - Vo, M.

AU - Huffaker, D.L.

AU - Höfling, S.

AU - Kamp, M.

AU - Lee, M.L.

N1 - C.D.Y. acknowledges support from the Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under Contract No. DE-AC05-06OR23100. Additional support was provided by the University of California Lab Fees Research Program (Grant No. 12-LR-238568).

PY - 2014/12/22

Y1 - 2014/12/22

N2 - Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

AB - Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

U2 - 10.1063/1.4904944

DO - 10.1063/1.4904944

M3 - Article

AN - SCOPUS:84919798208

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

ER -

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

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