Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

C.D. Yerino, P.J. Simmonds, B. Liang, D. Jung, C. Schneider, S. Unsleber, M. Vo, D.L. Huffaker, S. Höfling, M. Kamp, M.L. Lee

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24 Citations (Scopus)
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Abstract

Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.
Original languageEnglish
JournalApplied Physics Letters
Volume105
Issue number25
DOIs
Publication statusPublished - 22 Dec 2014

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