Strain distribution in bent ZnO microwires

C. P. Dietrich*, M. Lange, F. J. Kluepfel, H. von Wenckstern, R. Schmidt-Grund, M. Grundmann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

ZnO microwires grown by carbothermal reduction were mechanically bent and the uniaxial stress state was studied with spatially resolved low-temperature photoluminescence. Inhomogeneous (tensile and compressive) stress (up to +/- 1 GPa) is visualized by the redshift and blueshift of the wire luminescence. Experimentally determined tensile and compressive strain along the c-axis (wire axis) of up to 1.5 %, symmetrically distributed with respect to the central axis (neutral fiber), is achieved, resulting in maximum energetic shifts of +/- 30 meV. Within these experiments, we are able to precisely determine the direct relation between energetic shift of the free A-exciton energy and strain to (-2.04 +/- 0.02) eV. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544939]

Original languageEnglish
Article number031105
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number3
DOIs
Publication statusPublished - 17 Jan 2011

Keywords

  • NANOWIRES
  • GROWTH
  • HETEROSTRUCTURES
  • SENSOR
  • LAYERS

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