Abstract
Electromagnetic band structure can produce either an enhancement or a suppression of spontaneous emission from two-dimensional (2-D) photonic crystal thin films. We believe that such effects might be important for light emitting diodes. Our experiments were based on thin-film InGaAs/InP 2-D photonic crystals at ambient temperature, but the concepts would apply equally to InGaN thin films, for example. We show that the magnitude of Purcell enhancement factor, F-p similar to 2, for spatially extended band modes, is similar to that for a tiny mode in a three-dimensional (3-D) nanocavity. Nonetheless, light extraction enhancement that arises from Zone folding or Bragg scattering of the photonic bands is probably the more important effect, and an external quantum efficiency > 50% is possible. Angle resolved photoluminescence from inside the photonic crystal gives a direct spectral readout of the internal 2-D photonic band dispersion. The tradeoffs for employing various photonic crystal structures in high efficiency light-emitting diodes are analyzed.
| Original language | English |
|---|---|
| Pages (from-to) | 2096-2112 |
| Number of pages | 17 |
| Journal | Journal of Lightwave Technology |
| Volume | 17 |
| Issue number | 11 |
| Publication status | Published - Nov 1999 |
Keywords
- photonic crystals
- Purcell effect
- spontaneous emission
- LIGHT-EMITTING-DIODES
- DOUBLE HETEROSTRUCTURES
- QUANTUM EFFICIENCY
- BAND-STRUCTURE
- GAP
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