Spin gratings and the measurement of electron drift mobility in multiple quantum well semiconductors

Alan Miller; AR Cameron; P Riblet

doi:10.1103/PhysRevLett.76.4793

Spin gratings and the measurement of electron drift mobility in multiple quantum well semiconductors

Alan Miller, AR Cameron, P Riblet

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

A direct optical measurement of electron drift mobility in multiple quantum well semiconductors is achieved by creating electron spin gratings in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs/AlGaAs sample at room temperature, giving an in-well electron diffusion coefficient D-e = 127 cm(2)/s compared with an ambipolar coefficient D-a = 13.3 cm(2)/s.

Original language	English
Pages (from-to)	4793-4796
Number of pages	4
Journal	Physical Review Letters
Volume	76
DOIs	https://doi.org/10.1103/PhysRevLett.76.4793
Publication status	Published - 17 Jun 1996

Keywords

EXCITONIC OPTICAL NONLINEARITIES
GAAS
DYNAMICS

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10.1103/PhysRevLett.76.4793

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abstract = "A direct optical measurement of electron drift mobility in multiple quantum well semiconductors is achieved by creating electron spin gratings in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs/AlGaAs sample at room temperature, giving an in-well electron diffusion coefficient D-e = 127 cm(2)/s compared with an ambipolar coefficient D-a = 13.3 cm(2)/s.",

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N2 - A direct optical measurement of electron drift mobility in multiple quantum well semiconductors is achieved by creating electron spin gratings in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs/AlGaAs sample at room temperature, giving an in-well electron diffusion coefficient D-e = 127 cm(2)/s compared with an ambipolar coefficient D-a = 13.3 cm(2)/s.

AB - A direct optical measurement of electron drift mobility in multiple quantum well semiconductors is achieved by creating electron spin gratings in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs/AlGaAs sample at room temperature, giving an in-well electron diffusion coefficient D-e = 127 cm(2)/s compared with an ambipolar coefficient D-a = 13.3 cm(2)/s.

KW - EXCITONIC OPTICAL NONLINEARITIES

KW - GAAS

KW - DYNAMICS

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ER -

Spin gratings and the measurement of electron drift mobility in multiple quantum well semiconductors

Abstract

Keywords

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