Spin and valley control of free carriers in single-layer WS2

Søren Ulstrup; Antonija Grubišić  Čabo; Jonathon M. Riley; Maciej Dendzik; Charlotte E. Sanders; Marco Bianchi; Cephise Cacho; Dan Matselyukh; Richard T. Chapman; Emma Springate; Phil D. C. King; Jill A. Miwa; Philip Hofmann

doi:10.1103/PhysRevB.95.041405

Spin and valley control of free carriers in single-layer WS₂

Søren Ulstrup, Antonija Grubišić Čabo, Jonathon M. Riley, Maciej Dendzik, Charlotte E. Sanders, Marco Bianchi, Cephise Cacho, Dan Matselyukh, Richard T. Chapman, Emma Springate, Phil D. C. King, Jill A. Miwa, Philip Hofmann

Research output: Contribution to journal › Article › peer-review

Abstract

The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high quality single layer (SL) of WS₂ grown on Ag(111). We present a momentum resolved analysis of the optically generated free hole density around the valence band maximum of SL WS₂ for linearly and circularly polarized optical excitations. We observe that the excited free holes are valley polarized within the upper spin-split branch of the valence band, which implies that the photon energy and polarization of the excitation permit selective excitations of free electron-hole pairs with a given spin and within a single valley.

Original language	English
Article number	041405(R)
Number of pages	5
Journal	Physical Review. B, Condensed matter and materials physics
Volume	95
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.95.041405
Publication status	Published - 23 Jan 2017

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10.1103/PhysRevB.95.041405

Ulstrup_2017_Spin_PhysRevA_AAM
© 2017 American Physical Society. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at journals.aps.org/prb / https://doi.org/10.1103/PhysRevB.95.041405
Accepted author manuscript, 3.27 MB

Engineering and Imaging Enhanced: Engineering and imaging enhamced spin splittings in solids
King, P. (PI)
EPSRC
1/07/15 → 30/09/17
Project: Standard
Royal Society Research Fellowship: Electronic structure engineering of novel topological phases
King, P. (PI)
The Royal Society
1/10/13 → 30/09/18
Project: Fellowship

Spin and Valley Control of Free Carriers in Single-Layer WS2 (dataset)
Ulstrup, S. (Creator), Grubisic Cabo, A. (Creator), Biswas, D. (Creator), Riley, J. M. (Creator), Dendzik, M. (Creator), Sanders, C. E. (Creator), Bianchi, M. (Creator), Cacho, C. (Creator), Matselyukh, D. (Creator), Chapman, R. T. (Creator), Springate, E. (Creator), King, P. D. (Creator), Miwa, J. A. (Creator) & Hofmann, P. (Creator), University of St Andrews, 31 Jan 2017
DOI: 10.17630/a25b95c6-b9e8-4ecf-9559-bb09e58a7835
Dataset

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Cite this

Ulstrup, S., Čabo, A. G., Riley, J. M., Dendzik, M., Sanders, C. E., Bianchi, M., Cacho, C., Matselyukh, D., Chapman, R. T., Springate, E., King, P. D. C., Miwa, J. A., & Hofmann, P. (2017). Spin and valley control of free carriers in single-layer WS₂. Physical Review. B, Condensed matter and materials physics, 95(4), Article 041405(R). https://doi.org/10.1103/PhysRevB.95.041405

@article{23de5d854e1c4ffc9bfbdb1defe368a0,

title = "Spin and valley control of free carriers in single-layer WS2",

abstract = "The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high quality single layer (SL) of WS2 grown on Ag(111). We present a momentum resolved analysis of the optically generated free hole density around the valence band maximum of SL WS2 for linearly and circularly polarized optical excitations. We observe that the excited free holes are valley polarized within the upper spin-split branch of the valence band, which implies that the photon energy and polarization of the excitation permit selective excitations of free electron-hole pairs with a given spin and within a single valley.",

author = "S{\o}ren Ulstrup and {\v C}abo, {Antonija Grubi{\v s}i{\'c}} and Riley, {Jonathon M.} and Maciej Dendzik and Sanders, {Charlotte E.} and Marco Bianchi and Cephise Cacho and Dan Matselyukh and Chapman, {Richard T.} and Emma Springate and King, {Phil D. C.} and Miwa, {Jill A.} and Philip Hofmann",

note = "Data are available from http://dx.doi.org/10.17630/a25b95c6-b9e8-4ecf-9559-bb09e58a7835",

year = "2017",

month = jan,

day = "23",

doi = "10.1103/PhysRevB.95.041405",

language = "English",

volume = "95",

journal = "Physical Review. B, Condensed matter and materials physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Spin and valley control of free carriers in single-layer WS2

AU - Ulstrup, Søren

AU - Čabo, Antonija Grubišić

AU - Riley, Jonathon M.

AU - Dendzik, Maciej

AU - Sanders, Charlotte E.

AU - Bianchi, Marco

AU - Cacho, Cephise

AU - Matselyukh, Dan

AU - Chapman, Richard T.

AU - Springate, Emma

AU - King, Phil D. C.

AU - Miwa, Jill A.

AU - Hofmann, Philip

N1 - Data are available from http://dx.doi.org/10.17630/a25b95c6-b9e8-4ecf-9559-bb09e58a7835

PY - 2017/1/23

Y1 - 2017/1/23

N2 - The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high quality single layer (SL) of WS2 grown on Ag(111). We present a momentum resolved analysis of the optically generated free hole density around the valence band maximum of SL WS2 for linearly and circularly polarized optical excitations. We observe that the excited free holes are valley polarized within the upper spin-split branch of the valence band, which implies that the photon energy and polarization of the excitation permit selective excitations of free electron-hole pairs with a given spin and within a single valley.

AB - The semiconducting single-layer transition metal dichalcogenides have been identified as ideal materials for accessing and manipulating spin- and valley-quantum numbers due to a set of favorable optical selection rules in these materials. Here, we apply time- and angle-resolved photoemission spectroscopy to directly probe optically excited free carriers in the electronic band structure of a high quality single layer (SL) of WS2 grown on Ag(111). We present a momentum resolved analysis of the optically generated free hole density around the valence band maximum of SL WS2 for linearly and circularly polarized optical excitations. We observe that the excited free holes are valley polarized within the upper spin-split branch of the valence band, which implies that the photon energy and polarization of the excitation permit selective excitations of free electron-hole pairs with a given spin and within a single valley.

U2 - 10.1103/PhysRevB.95.041405

DO - 10.1103/PhysRevB.95.041405

M3 - Article

SN - 1098-0121

VL - 95

JO - Physical Review. B, Condensed matter and materials physics

JF - Physical Review. B, Condensed matter and materials physics

IS - 4

M1 - 041405(R)

ER -

Spin and valley control of free carriers in single-layer WS2

Abstract

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Projects

Engineering and Imaging Enhanced: Engineering and imaging enhamced spin splittings in solids

Royal Society Research Fellowship: Electronic structure engineering of novel topological phases

Datasets

Spin and Valley Control of Free Carriers in Single-Layer WS2 (dataset)

Cite this

Spin and valley control of free carriers in single-layer WS₂