Site-controlled InP/GaInP quantum dots emitting single photons in the red spectral range

Vasilij Baumann, Florian Stumpf, Christian Schneider, Stefan Kremling, Lukas Worschech, Alfred Forchel, Sven Höfling, Martin Kamp

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16 Citations (Scopus)

Abstract

We report on site-controlled growth of InP/GaInP quantum dots (QDs) on GaAs substrates. The QD nucleation sites are defined by shallow nanoholes etched into a GaInP layer. Optimized growth conditions allow us to realize QD arrays with excellent long range ordering on nanohole periods as large as 1.25 mu m. Single QD lines with an average linewidth of 553 mu eV and best values below 200 mu eV are observed. Photoluminescence spectroscopy reveals excitonic and biexcitonic emission in the wavelength range of about 670 nm (1.85 eV) with an exciton-biexciton splitting of 1.8 meV. Second-order photon-autocorrelation measurements show clear single photon emission with g((2))(0) = 0.13 +/- 0.01. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3690872]

Original languageEnglish
Article number091109
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
Publication statusPublished - 27 Feb 2012

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