Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

A. Huggenberger; C. Schneider; C. Drescher; S. Heckelmann; T. Heindel; S. Reitzenstein; M. Kamp; Sven Höfling; L. Worschech; A. Forchel

doi:10.1016/j.jcrysgro.2010.11.144

Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

A. Huggenberger^*, C. Schneider, C. Drescher, S. Heckelmann, T. Heindel, S. Reitzenstein, M. Kamp, Sven Höfling, L. Worschech, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545 degrees C during growth ensures optimal SCQD nucleation on square arrays from 200 nm up to 10 mu m period. The SCQDs exhibit a small inhomogeneous broadening of the ensemble emission and a rather narrow single SCQD linewidth. We used a scalable alignment technique to integrate the SCQDs into a p-i-n diode and observe electroluminescence of a single SCQD with a linewidth of 400 mu eV. (C) 2010 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	194-197
Number of pages	4
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.11.144
Publication status	Published - 15 May 2011
Event	16th International Conference on Molecular Beam Epitaxy (ICMBE) - Berlin, Germany Duration: 22 Aug 2010 → 27 Aug 2010

Keywords

Nanostructures
Quantum dots
Site-controlled growth
Semiconducting III-V materials

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10.1016/j.jcrysgro.2010.11.144

Cite this

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title = "Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices",

abstract = "We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545 degrees C during growth ensures optimal SCQD nucleation on square arrays from 200 nm up to 10 mu m period. The SCQDs exhibit a small inhomogeneous broadening of the ensemble emission and a rather narrow single SCQD linewidth. We used a scalable alignment technique to integrate the SCQDs into a p-i-n diode and observe electroluminescence of a single SCQD with a linewidth of 400 mu eV. (C) 2010 Elsevier B.V. All rights reserved.",

keywords = "Nanostructures, Quantum dots, Site-controlled growth, Semiconducting III-V materials",

author = "A. Huggenberger and C. Schneider and C. Drescher and S. Heckelmann and T. Heindel and S. Reitzenstein and M. Kamp and Sven H{\"o}fling and L. Worschech and A. Forchel",

year = "2011",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2010.11.144",

language = "English",

volume = "323",

pages = "194--197",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

note = "16th International Conference on Molecular Beam Epitaxy (ICMBE) ; Conference date: 22-08-2010 Through 27-08-2010",

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TY - JOUR

T1 - Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

AU - Huggenberger, A.

AU - Schneider, C.

AU - Drescher, C.

AU - Heckelmann, S.

AU - Heindel, T.

AU - Reitzenstein, S.

AU - Kamp, M.

AU - Höfling, Sven

AU - Worschech, L.

AU - Forchel, A.

PY - 2011/5/15

Y1 - 2011/5/15

N2 - We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545 degrees C during growth ensures optimal SCQD nucleation on square arrays from 200 nm up to 10 mu m period. The SCQDs exhibit a small inhomogeneous broadening of the ensemble emission and a rather narrow single SCQD linewidth. We used a scalable alignment technique to integrate the SCQDs into a p-i-n diode and observe electroluminescence of a single SCQD with a linewidth of 400 mu eV. (C) 2010 Elsevier B.V. All rights reserved.

AB - We investigated the growth and device integration of site-controlled In(Ga)As quantum dots (SCQDs) on a pre-patterned substrate. A high substrate temperature of 545 degrees C during growth ensures optimal SCQD nucleation on square arrays from 200 nm up to 10 mu m period. The SCQDs exhibit a small inhomogeneous broadening of the ensemble emission and a rather narrow single SCQD linewidth. We used a scalable alignment technique to integrate the SCQDs into a p-i-n diode and observe electroluminescence of a single SCQD with a linewidth of 400 mu eV. (C) 2010 Elsevier B.V. All rights reserved.

KW - Nanostructures

KW - Quantum dots

KW - Site-controlled growth

KW - Semiconducting III-V materials

U2 - 10.1016/j.jcrysgro.2010.11.144

DO - 10.1016/j.jcrysgro.2010.11.144

M3 - Article

SN - 0022-0248

VL - 323

SP - 194

EP - 197

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - 16th International Conference on Molecular Beam Epitaxy (ICMBE)

Y2 - 22 August 2010 through 27 August 2010

ER -

Site-controlled In(Ga)As/GaAs quantum dots for integration into optically and electrically operated devices

Abstract

Keywords

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