Site-controlled InAs/GaAs quantum dots emitting at telecommunication wavelength

S. Maier*, K. Berschneider, T. Steinl, A. Forchel, S. Hoefling, C. Schneider, M. Kamp

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We demonstrate site-controlled InAs/GaAs quantum dot (QD) emission at 1.3 mu m telecommunication wavelength. The samples were fabricated by molecular beam epitaxy on patterned substrates, which have been prepared by electron beam lithography and wet chemical etching. By embedding a single layer of positioned QDs in a strain reducing InGaAs quantum well layer, we successfully shifted the emission band beyond the important telecommunication wavelength of 1.3 mu m. Furthermore, the resulting deep carrier confinement allowed us to preserve strong QD luminescence up to room temperature.

Original languageEnglish
Article number052001
Number of pages4
JournalSemiconductor Science and Technology
Volume29
Issue number5
Early online date28 Mar 2014
DOIs
Publication statusPublished - May 2014

Keywords

  • site-controlled quantum dots
  • telecommunication wavelength
  • DWELL structure
  • Single photon source
  • 1.5 MU-M
  • Well structures
  • Light emission
  • Photoluminescence
  • Turnstile
  • GAAS

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