Site-controlled growth of InP/GaInP quantum dots on GaAs substrates

V. Baumann; F. Stumpf; T. Steinl; A. Forchel; C. Schneider; Sven Höfling; M. Kamp

doi:10.1088/0957-4484/23/37/375301

Site-controlled growth of InP/GaInP quantum dots on GaAs substrates

V. Baumann^*, F. Stumpf, T. Steinl, A. Forchel, C. Schneider, Sven Höfling, M. Kamp

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A technology platform for the epitaxial growth of site-controlled InP quantum dots (QDs) on GaAs substrates is presented. Nanoholes are patterned in a GaInP layer on a GaAs substrate by electron beam lithography and dry chemical etching, serving as QD nucleation centers. The effects of a thermal treatment on the structured surfaces for deoxidation are investigated in detail. By regrowth on these surfaces, accurate QD positioning is obtained for square array arrangements with lattice periods of 1.25 mu m along with a high suppression of interstitial island formation. The optical properties of these red-emitting QDs (lambda similar to 670 nm) are investigated by means of ensemble-and micro-photoluminescence spectroscopy at cryogenic temperatures.

Original language	English
Article number	375301
Number of pages	8
Journal	Nanotechnology
Volume	23
Issue number	37
DOIs	https://doi.org/10.1088/0957-4484/23/37/375301
Publication status	Published - 21 Sept 2012

Keywords

SINGLE PHOTONS
SYSTEM

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10.1088/0957-4484/23/37/375301

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title = "Site-controlled growth of InP/GaInP quantum dots on GaAs substrates",

abstract = "A technology platform for the epitaxial growth of site-controlled InP quantum dots (QDs) on GaAs substrates is presented. Nanoholes are patterned in a GaInP layer on a GaAs substrate by electron beam lithography and dry chemical etching, serving as QD nucleation centers. The effects of a thermal treatment on the structured surfaces for deoxidation are investigated in detail. By regrowth on these surfaces, accurate QD positioning is obtained for square array arrangements with lattice periods of 1.25 mu m along with a high suppression of interstitial island formation. The optical properties of these red-emitting QDs (lambda similar to 670 nm) are investigated by means of ensemble-and micro-photoluminescence spectroscopy at cryogenic temperatures.",

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doi = "10.1088/0957-4484/23/37/375301",

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T1 - Site-controlled growth of InP/GaInP quantum dots on GaAs substrates

AU - Baumann, V.

AU - Stumpf, F.

AU - Steinl, T.

AU - Forchel, A.

AU - Schneider, C.

AU - Höfling, Sven

AU - Kamp, M.

PY - 2012/9/21

Y1 - 2012/9/21

N2 - A technology platform for the epitaxial growth of site-controlled InP quantum dots (QDs) on GaAs substrates is presented. Nanoholes are patterned in a GaInP layer on a GaAs substrate by electron beam lithography and dry chemical etching, serving as QD nucleation centers. The effects of a thermal treatment on the structured surfaces for deoxidation are investigated in detail. By regrowth on these surfaces, accurate QD positioning is obtained for square array arrangements with lattice periods of 1.25 mu m along with a high suppression of interstitial island formation. The optical properties of these red-emitting QDs (lambda similar to 670 nm) are investigated by means of ensemble-and micro-photoluminescence spectroscopy at cryogenic temperatures.

AB - A technology platform for the epitaxial growth of site-controlled InP quantum dots (QDs) on GaAs substrates is presented. Nanoholes are patterned in a GaInP layer on a GaAs substrate by electron beam lithography and dry chemical etching, serving as QD nucleation centers. The effects of a thermal treatment on the structured surfaces for deoxidation are investigated in detail. By regrowth on these surfaces, accurate QD positioning is obtained for square array arrangements with lattice periods of 1.25 mu m along with a high suppression of interstitial island formation. The optical properties of these red-emitting QDs (lambda similar to 670 nm) are investigated by means of ensemble-and micro-photoluminescence spectroscopy at cryogenic temperatures.

KW - SINGLE PHOTONS

KW - SYSTEM

U2 - 10.1088/0957-4484/23/37/375301

DO - 10.1088/0957-4484/23/37/375301

M3 - Article

SN - 0957-4484

VL - 23

JO - Nanotechnology

JF - Nanotechnology

IS - 37

M1 - 375301

ER -

Site-controlled growth of InP/GaInP quantum dots on GaAs substrates

Abstract

Keywords

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