Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture for metal-insulator-metal capacitor applications

Sita Dugu, Shojan P. Pavunny, James Floyd Scott, Ram S. Katiyar

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7 Citations (Scopus)


Metal-insulator-metal (MIM) capacitors comprised of amorphous Si:SrTiO3-Al2O3-Si:SrTiO3 multi-dielectric architecture have been fabricated employing a combination of pulsed laser and atomic layer deposition techniques. The voltage linearity, temperature coefficients of capacitance, dielectric and electrical properties upon thickness were studied under a wide range of temperature (200 – 400 K) and electric field stress (± 1.5 MV/cm). A high capacitance density
of 31 fF/µm2, a low voltage coefficient of capacitance of 363 ppm/V2, a low temperature coefficient of capacitance of < 644 ppm/K and an effective dielectric constant of ~133 are demonstrated in a MIM capacitor with ~1.4 nm capacitance equivalent thickness in a ~40 nm thick ultra high-k multi-dielectric stack. All of these properties make this dielectric architecture of interest for next generation highly scaled MIM capacitor applications.
Original languageEnglish
Article number212901
Number of pages5
JournalApplied Physics Letters
Issue number21
Early online date21 Nov 2016
Publication statusPublished - 21 Nov 2016


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