Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Ł Dusanowski; M Syperek; J Misiewicz; A Somers; Sven Hoefling; M Kamp; J P Reithmaier; G Sęk

doi:10.1063/1.4947448

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Ł Dusanowski, M Syperek, J Misiewicz, A Somers, Sven Hoefling, M Kamp, J P Reithmaier, G Sęk

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Abstract

We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g⁽²⁾(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.

Original language	English
Article number	163108
Journal	Applied Physics Letters
Volume	108
Issue number	16
DOIs	https://doi.org/10.1063/1.4947448
Publication status	Published - 18 Apr 2016

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title = "Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K",

abstract = "We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.",

author = "{\L} Dusanowski and M Syperek and J Misiewicz and A Somers and Sven Hoefling and M Kamp and Reithmaier, {J P} and G S{\c e}k",

note = "This research was supported by the National Science Center of Poland within Grant No. 2011/02/A/ST3/00152.",

year = "2016",

month = apr,

day = "18",

doi = "10.1063/1.4947448",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

AU - Dusanowski, Ł

AU - Syperek, M

AU - Misiewicz, J

AU - Somers, A

AU - Hoefling, Sven

AU - Kamp, M

AU - Reithmaier, J P

AU - Sęk, G

N1 - This research was supported by the National Science Center of Poland within Grant No. 2011/02/A/ST3/00152.

PY - 2016/4/18

Y1 - 2016/4/18

N2 - We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.

AB - We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.

U2 - 10.1063/1.4947448

DO - 10.1063/1.4947448

M3 - Article

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 163108

ER -

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

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