Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Ł Dusanowski, M Syperek, J Misiewicz, A Somers, Sven Hoefling, M Kamp, J P Reithmaier, G Sęk

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.
Original languageEnglish
Article number163108
JournalApplied Physics Letters
Volume108
Issue number16
DOIs
Publication statusPublished - 18 Apr 2016

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