Single photon emission of a charge-tunable GaAs/Al0.25Ga0.75As droplet quantum dot device

Fabian Langer*, David Plischke, Martin Kamp, Sven Hoefling

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this work, we report the fabrication of a charge-tunable GaAs/Al0.25Ga0.75As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 109 cm-2 range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40 μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g(2)(0) = 0.05).

Original languageEnglish
Article number081111
Number of pages5
JournalApplied Physics Letters
Volume105
Issue number8
DOIs
Publication statusPublished - 28 Aug 2014

Keywords

  • Epitaxy

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