Single photon emission of a charge-tunable GaAs/Al0.25Ga0.75As droplet quantum dot device

Fabian Langer; David Plischke; Martin Kamp; Sven Hoefling

doi:10.1063/1.4894372

Single photon emission of a charge-tunable GaAs/Al_0.25Ga_0.75As droplet quantum dot device

Fabian Langer^*, David Plischke, Martin Kamp, Sven Hoefling

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

1 Downloads (Pure)

Abstract

In this work, we report the fabrication of a charge-tunable GaAs/Al_0.25Ga_0.75As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 10⁹ cm^-2 range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40 μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g⁽²⁾(0) = 0.05).

Original language	English
Article number	081111
Number of pages	5
Journal	Applied Physics Letters
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.4894372
Publication status	Published - 28 Aug 2014

Keywords

Epitaxy

Access to Document

10.1063/1.4894372

Hoefling_2014_APL_SinglePhoton_Final_Pub_Version
© 2014 AIP Publishing LLC.This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at http://dx.doi.org/10.1063/1.4894372.
Final published version, 1.46 MB

Cite this

@article{9ff84ee2e3bb4547a603d064b1105a8c,

title = "Single photon emission of a charge-tunable GaAs/Al0.25Ga0.75As droplet quantum dot device",

abstract = "In this work, we report the fabrication of a charge-tunable GaAs/Al0.25Ga0.75As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 109 cm-2 range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40 μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g(2)(0) = 0.05). ",

keywords = "Epitaxy",

author = "Fabian Langer and David Plischke and Martin Kamp and Sven Hoefling",

note = "This work was financially supported by the Bundesministerium f{\H u}r Bildung und Forschung (BMBF) within the Project “QuaHL-Rep” under Contract No. (FKZ) 01BQ1042.",

year = "2014",

month = aug,

day = "28",

doi = "10.1063/1.4894372",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Single photon emission of a charge-tunable GaAs/Al0.25Ga0.75As droplet quantum dot device

AU - Langer, Fabian

AU - Plischke, David

AU - Kamp, Martin

AU - Hoefling, Sven

N1 - This work was financially supported by the Bundesministerium fűr Bildung und Forschung (BMBF) within the Project “QuaHL-Rep” under Contract No. (FKZ) 01BQ1042.

PY - 2014/8/28

Y1 - 2014/8/28

N2 - In this work, we report the fabrication of a charge-tunable GaAs/Al0.25Ga0.75As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 109 cm-2 range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40 μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g(2)(0) = 0.05).

AB - In this work, we report the fabrication of a charge-tunable GaAs/Al0.25Ga0.75As quantum dot (QD) device containing QDs deposited by modified droplet epitaxy producing almost strain and composition gradient free QDs. We obtained a QD density in the low 109 cm-2 range that enables us to perform spectroscopy on single droplet QDs showing linewidths as narrow as 40 μeV. The integration of the QDs into a Schottky diode allows us to controllably charge a single QD with up to four electrons, while non-classical photoluminescence is proven by photon auto-correlation measurements showing photon-antibunching (g(2)(0) = 0.05).

KW - Epitaxy

U2 - 10.1063/1.4894372

DO - 10.1063/1.4894372

M3 - Article

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081111

ER -