Single photon emission in the red spectral range from a GaAs-based self-assembled quantum dot

L. Dusanowski; A. Golnik; M. Syperek; M. Nawrocki; G. Sek; J. Misiewicz; T. W. Schlereth; C. Schneider; Sven Höfling; M. Kamp; A. Forchel

doi:10.1063/1.4750241

Single photon emission in the red spectral range from a GaAs-based self-assembled quantum dot

L. Dusanowski^*, A. Golnik, M. Syperek, M. Nawrocki, G. Sek, J. Misiewicz, T. W. Schlereth, C. Schneider, Sven Höfling, M. Kamp, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Low temperature micro-photoluminecence and second-order single photon correlation experiments were performed on individual self-assembled In0.47Al0.34Ga0.19As/Al0.3Ga0.7As/GaAs quantum dots emitting in the range of 680-780 nm. Emission lines originating from exciton, biexciton, and charge exciton confined in the same dot could be identified. The derived exciton fine structure splitting is similar to 125 mu eV, whereas the biexciton and charge exciton binding energies are similar to 4 and similar to 9meV, respectively. The photon correlation statistics measured for the exciton emission exhibited a clear antibunching with the value of g(X-X)(2)(0) = 0.30 +/- 0.05, confirming unambiguously that such quantum dots act as true single photon quantum emitters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750241]

Original language	English
Article number	103108
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	10
DOIs	https://doi.org/10.1063/1.4750241
Publication status	Published - 3 Sept 2012

Keywords

FLUORESCENCE
LIGHT
DEVICE

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10.1063/1.4750241

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@article{1f79c6b7eeee4f938da79f2f869fbb89,

title = "Single photon emission in the red spectral range from a GaAs-based self-assembled quantum dot",

abstract = "Low temperature micro-photoluminecence and second-order single photon correlation experiments were performed on individual self-assembled In0.47Al0.34Ga0.19As/Al0.3Ga0.7As/GaAs quantum dots emitting in the range of 680-780 nm. Emission lines originating from exciton, biexciton, and charge exciton confined in the same dot could be identified. The derived exciton fine structure splitting is similar to 125 mu eV, whereas the biexciton and charge exciton binding energies are similar to 4 and similar to 9meV, respectively. The photon correlation statistics measured for the exciton emission exhibited a clear antibunching with the value of g(X-X)(2)(0) = 0.30 +/- 0.05, confirming unambiguously that such quantum dots act as true single photon quantum emitters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750241]",

keywords = "FLUORESCENCE, LIGHT, DEVICE",

author = "L. Dusanowski and A. Golnik and M. Syperek and M. Nawrocki and G. Sek and J. Misiewicz and Schlereth, {T. W.} and C. Schneider and Sven H{\"o}fling and M. Kamp and A. Forchel",

year = "2012",

month = sep,

day = "3",

doi = "10.1063/1.4750241",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Single photon emission in the red spectral range from a GaAs-based self-assembled quantum dot

AU - Dusanowski, L.

AU - Golnik, A.

AU - Syperek, M.

AU - Nawrocki, M.

AU - Sek, G.

AU - Misiewicz, J.

AU - Schlereth, T. W.

AU - Schneider, C.

AU - Höfling, Sven

AU - Kamp, M.

AU - Forchel, A.

PY - 2012/9/3

Y1 - 2012/9/3

N2 - Low temperature micro-photoluminecence and second-order single photon correlation experiments were performed on individual self-assembled In0.47Al0.34Ga0.19As/Al0.3Ga0.7As/GaAs quantum dots emitting in the range of 680-780 nm. Emission lines originating from exciton, biexciton, and charge exciton confined in the same dot could be identified. The derived exciton fine structure splitting is similar to 125 mu eV, whereas the biexciton and charge exciton binding energies are similar to 4 and similar to 9meV, respectively. The photon correlation statistics measured for the exciton emission exhibited a clear antibunching with the value of g(X-X)(2)(0) = 0.30 +/- 0.05, confirming unambiguously that such quantum dots act as true single photon quantum emitters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750241]

AB - Low temperature micro-photoluminecence and second-order single photon correlation experiments were performed on individual self-assembled In0.47Al0.34Ga0.19As/Al0.3Ga0.7As/GaAs quantum dots emitting in the range of 680-780 nm. Emission lines originating from exciton, biexciton, and charge exciton confined in the same dot could be identified. The derived exciton fine structure splitting is similar to 125 mu eV, whereas the biexciton and charge exciton binding energies are similar to 4 and similar to 9meV, respectively. The photon correlation statistics measured for the exciton emission exhibited a clear antibunching with the value of g(X-X)(2)(0) = 0.30 +/- 0.05, confirming unambiguously that such quantum dots act as true single photon quantum emitters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750241]

KW - FLUORESCENCE

KW - LIGHT

KW - DEVICE

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DO - 10.1063/1.4750241

M3 - Article

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103108

ER -

Single photon emission in the red spectral range from a GaAs-based self-assembled quantum dot

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Keywords

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