Single photon emission in the red spectral range from a GaAs-based self-assembled quantum dot

L. Dusanowski*, A. Golnik, M. Syperek, M. Nawrocki, G. Sek, J. Misiewicz, T. W. Schlereth, C. Schneider, Sven Höfling, M. Kamp, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Low temperature micro-photoluminecence and second-order single photon correlation experiments were performed on individual self-assembled In0.47Al0.34Ga0.19As/Al0.3Ga0.7As/GaAs quantum dots emitting in the range of 680-780 nm. Emission lines originating from exciton, biexciton, and charge exciton confined in the same dot could be identified. The derived exciton fine structure splitting is similar to 125 mu eV, whereas the biexciton and charge exciton binding energies are similar to 4 and similar to 9meV, respectively. The photon correlation statistics measured for the exciton emission exhibited a clear antibunching with the value of g(X-X)(2)(0) = 0.30 +/- 0.05, confirming unambiguously that such quantum dots act as true single photon quantum emitters. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750241]

Original languageEnglish
Article number103108
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number10
DOIs
Publication statusPublished - 3 Sept 2012

Keywords

  • FLUORESCENCE
  • LIGHT
  • DEVICE

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