Single photon emission from positioned GaAs/AlGaAs photonic nanowires

J. Heinrich*, A. Huggenberger, T. Heindel, S. Reitzenstein, Sven Höfling, L. Worschech, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

74 Citations (Scopus)

Abstract

Positioned AlGaAs nanowires with an embedded axial heterostructure GaAs quantum dot (QD) on a prepatterned substrate have been grown. The geometry of the nanowires allows for an outcoupling of the emitted light through the nanowire tip and thereby to probe a single nanowire directly on the growth substrate. Single QD linewidths as small as 95 mu eV and photon antibunching were observed at continuous wave laser excitation with a second order autocorrelation function g((2))(0)=0.46. The results represent an attractive bottom-up fabrication approach for the realization of high efficiency photonic wire based single photon sources. (C) 2010 American Institute of Physics. [doi:10.1063/1.3440967]

Original languageEnglish
Article number211117
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number21
DOIs
Publication statusPublished - 24 May 2010

Keywords

  • aluminium compounds
  • gallium arsenide
  • III-V semiconductors
  • nanofabrication
  • nanowires
  • photon antibunching
  • photonic crystals
  • semiconductor growth
  • semiconductor heterojunctions
  • semiconductor quantum dots
  • spectral line breadth
  • QUANTUM DOTS
  • GAAS NANOWIRES
  • GROWTH
  • PHOTOLUMINESCENCE
  • TRANSITION

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