Single photon emission from positioned GaAs/AlGaAs photonic nanowires

J. Heinrich; A. Huggenberger; T. Heindel; S. Reitzenstein; Sven Höfling; L. Worschech; A. Forchel

doi:10.1063/1.3440967

Single photon emission from positioned GaAs/AlGaAs photonic nanowires

J. Heinrich^*, A. Huggenberger, T. Heindel, S. Reitzenstein, Sven Höfling, L. Worschech, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Positioned AlGaAs nanowires with an embedded axial heterostructure GaAs quantum dot (QD) on a prepatterned substrate have been grown. The geometry of the nanowires allows for an outcoupling of the emitted light through the nanowire tip and thereby to probe a single nanowire directly on the growth substrate. Single QD linewidths as small as 95 mu eV and photon antibunching were observed at continuous wave laser excitation with a second order autocorrelation function g((2))(0)=0.46. The results represent an attractive bottom-up fabrication approach for the realization of high efficiency photonic wire based single photon sources. (C) 2010 American Institute of Physics. [doi:10.1063/1.3440967]

Original language	English
Article number	211117
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	21
DOIs	https://doi.org/10.1063/1.3440967
Publication status	Published - 24 May 2010

Keywords

aluminium compounds
gallium arsenide
III-V semiconductors
nanofabrication
nanowires
photon antibunching
photonic crystals
semiconductor growth
semiconductor heterojunctions
semiconductor quantum dots
spectral line breadth
QUANTUM DOTS
GAAS NANOWIRES
GROWTH
PHOTOLUMINESCENCE
TRANSITION

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10.1063/1.3440967

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@article{9ed840a206f6438d9846efdfd394145d,

title = "Single photon emission from positioned GaAs/AlGaAs photonic nanowires",

abstract = "Positioned AlGaAs nanowires with an embedded axial heterostructure GaAs quantum dot (QD) on a prepatterned substrate have been grown. The geometry of the nanowires allows for an outcoupling of the emitted light through the nanowire tip and thereby to probe a single nanowire directly on the growth substrate. Single QD linewidths as small as 95 mu eV and photon antibunching were observed at continuous wave laser excitation with a second order autocorrelation function g((2))(0)=0.46. The results represent an attractive bottom-up fabrication approach for the realization of high efficiency photonic wire based single photon sources. (C) 2010 American Institute of Physics. [doi:10.1063/1.3440967]",

keywords = "aluminium compounds, gallium arsenide, III-V semiconductors, nanofabrication, nanowires, photon antibunching, photonic crystals, semiconductor growth, semiconductor heterojunctions, semiconductor quantum dots, spectral line breadth, QUANTUM DOTS, GAAS NANOWIRES, GROWTH, PHOTOLUMINESCENCE, TRANSITION",

author = "J. Heinrich and A. Huggenberger and T. Heindel and S. Reitzenstein and Sven H{\"o}fling and L. Worschech and A. Forchel",

year = "2010",

month = may,

day = "24",

doi = "10.1063/1.3440967",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

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T1 - Single photon emission from positioned GaAs/AlGaAs photonic nanowires

AU - Heinrich, J.

AU - Huggenberger, A.

AU - Heindel, T.

AU - Reitzenstein, S.

AU - Höfling, Sven

AU - Worschech, L.

AU - Forchel, A.

PY - 2010/5/24

Y1 - 2010/5/24

N2 - Positioned AlGaAs nanowires with an embedded axial heterostructure GaAs quantum dot (QD) on a prepatterned substrate have been grown. The geometry of the nanowires allows for an outcoupling of the emitted light through the nanowire tip and thereby to probe a single nanowire directly on the growth substrate. Single QD linewidths as small as 95 mu eV and photon antibunching were observed at continuous wave laser excitation with a second order autocorrelation function g((2))(0)=0.46. The results represent an attractive bottom-up fabrication approach for the realization of high efficiency photonic wire based single photon sources. (C) 2010 American Institute of Physics. [doi:10.1063/1.3440967]

AB - Positioned AlGaAs nanowires with an embedded axial heterostructure GaAs quantum dot (QD) on a prepatterned substrate have been grown. The geometry of the nanowires allows for an outcoupling of the emitted light through the nanowire tip and thereby to probe a single nanowire directly on the growth substrate. Single QD linewidths as small as 95 mu eV and photon antibunching were observed at continuous wave laser excitation with a second order autocorrelation function g((2))(0)=0.46. The results represent an attractive bottom-up fabrication approach for the realization of high efficiency photonic wire based single photon sources. (C) 2010 American Institute of Physics. [doi:10.1063/1.3440967]

KW - aluminium compounds

KW - gallium arsenide

KW - III-V semiconductors

KW - nanofabrication

KW - nanowires

KW - photon antibunching

KW - photonic crystals

KW - semiconductor growth

KW - semiconductor heterojunctions

KW - semiconductor quantum dots

KW - spectral line breadth

KW - QUANTUM DOTS

KW - GAAS NANOWIRES

KW - GROWTH

KW - PHOTOLUMINESCENCE

KW - TRANSITION

U2 - 10.1063/1.3440967

DO - 10.1063/1.3440967

M3 - Article

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 211117

ER -

Single photon emission from positioned GaAs/AlGaAs photonic nanowires

Abstract

Keywords

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