Single photon emission from InGaN/GaN quantum dots up to 50 K

Stefan Kremling; Christian Tessarek; Heiko Dartsch; Stephan Figge; Sven Höfling; Lukas Worschech; Carsten Kruse; Detlef Hommel; Alfred Forchel

doi:10.1063/1.3683521

Single photon emission from InGaN/GaN quantum dots up to 50 K

Stefan Kremling, Christian Tessarek, Heiko Dartsch, Stephan Figge, Sven Höfling, Lukas Worschech, Carsten Kruse, Detlef Hommel, Alfred Forchel

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (mu PL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50 K is demonstrated. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683521]

Original language	English
Article number	061115
Number of pages	3
Journal	Applied Physics Letters
Volume	100
Issue number	6
DOIs	https://doi.org/10.1063/1.3683521
Publication status	Published - 6 Feb 2012

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HIGH-TEMPERATURE

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10.1063/1.3683521

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title = "Single photon emission from InGaN/GaN quantum dots up to 50 K",

abstract = "We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (mu PL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50 K is demonstrated. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683521]",

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author = "Stefan Kremling and Christian Tessarek and Heiko Dartsch and Stephan Figge and Sven H{\"o}fling and Lukas Worschech and Carsten Kruse and Detlef Hommel and Alfred Forchel",

year = "2012",

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doi = "10.1063/1.3683521",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

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T1 - Single photon emission from InGaN/GaN quantum dots up to 50 K

AU - Kremling, Stefan

AU - Tessarek, Christian

AU - Dartsch, Heiko

AU - Figge, Stephan

AU - Höfling, Sven

AU - Worschech, Lukas

AU - Kruse, Carsten

AU - Hommel, Detlef

AU - Forchel, Alfred

PY - 2012/2/6

Y1 - 2012/2/6

N2 - We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (mu PL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50 K is demonstrated. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683521]

AB - We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (mu PL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50 K is demonstrated. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683521]

KW - HIGH-TEMPERATURE

U2 - 10.1063/1.3683521

DO - 10.1063/1.3683521

M3 - Article

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061115

ER -

Single photon emission from InGaN/GaN quantum dots up to 50 K

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