Single photon emission from InGaN/GaN quantum dots up to 50 K

Stefan Kremling, Christian Tessarek, Heiko Dartsch, Stephan Figge, Sven Höfling, Lukas Worschech, Carsten Kruse, Detlef Hommel, Alfred Forchel

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

We have investigated the optical properties of single InGaN quantum dots (QDs) by means of microphotoluminescence (mu PL) spectroscopy. The QDs were grown on sapphire substrate using metal organic vapor phase epitaxy. Sharp and isolated single exciton emission lines in the blue spectral range were observed. The QD luminescence shows a strong degree of linear polarization up to 96% perpendicular to the growth axis (c-axis) with no preferential alignment in the xy plane. Second order autocorrelation measurements were performed under pulsed excitation and single photon emission up to 50 K is demonstrated. (C) 2012 American Institute of Physics. [doi:10.1063/1.3683521]

Original languageEnglish
Article number061115
Number of pages3
JournalApplied Physics Letters
Volume100
Issue number6
DOIs
Publication statusPublished - 6 Feb 2012

Keywords

  • HIGH-TEMPERATURE

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