Short wavelength emission of AlGaInP quantum dots grown on GaP substrate

S. Gerhard*, S. Kremling, Sven Höfling, L. Worschech, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We report on the growth of AlGaInP quantum dots (QDs) with Al contents between 0% and 10% on GaP substrate by gas-source molecular beam epitaxy and the investigation of their morphological and low temperature photoluminescence properties. These high areal density QDs show short wavelength emission between 575 and 612 nm depending on their composition. The authors interpret the QD emission as originating from indirect type-II transitions. This interpretation is supported by a single-band effective-mass model, which allows us to describe the role of differing barrier composition in the QD emission. Time-resolved photoluminescence measurements are performed and discussed with respect to the calculations.

Original languageEnglish
Article number415604
Number of pages6
JournalNanotechnology
Volume22
Issue number41
DOIs
Publication statusPublished - 14 Oct 2011

Keywords

  • LIGHT-EMITTING-DIODES
  • EPITAXY
  • WELLS

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