Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

A. Lajn; H. von Wenckstern; G. Benndorf; C. P. Dietrich; M. Brandt; G. Biehne; H. Hochmuth; M. Lorenz; M. Grundmann

doi:10.1007/s11664-009-1017-7

Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

A. Lajn^*, H. von Wenckstern, G. Benndorf, C. P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Nominally undoped homoepitaxial ZnO thin films grown with pulsed-laser deposition at various oxygen partial pressures (3 x 10(-4)-0.1 mbar) were investigated with respect to shallow donors and compensation. From x-ray diffraction and photoluminescence studies, a correlation of the oxygen partial pressure and the strain in the samples was found. Capacitance-voltage and thermal admittance measurements, using PtO (x) -Schottky diodes, revealed a higher compensation for increasing oxygen partial pressure. A shallow donor level with a thermal activation energy of similar to 40 meV was observed by thermal admittance spectroscopy. This defect level was attributed to the I(3a) transition observed in photoluminescence and commonly assigned to interstitial zinc.

Original language	English
Pages (from-to)	595-600
Number of pages	6
Journal	Journal of Electronic Materials
Volume	39
Issue number	5
DOIs	https://doi.org/10.1007/s11664-009-1017-7
Publication status	Published - May 2010

Keywords

ZnO
Schottky diode
homoepitaxy
defects
admittance spectroscopy
photoluminescence
photoluminescence (PL)
thermal admittance spectroscopy (TAS)
PULSED-LASER DEPOSITION
VAPOR-PHASE EPITAXY
GROWTH
SAPPHIRE
CONTACTS

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@article{32fc49bc588b41199def6a4acf58fcc9,

title = "Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films",

abstract = "Nominally undoped homoepitaxial ZnO thin films grown with pulsed-laser deposition at various oxygen partial pressures (3 x 10(-4)-0.1 mbar) were investigated with respect to shallow donors and compensation. From x-ray diffraction and photoluminescence studies, a correlation of the oxygen partial pressure and the strain in the samples was found. Capacitance-voltage and thermal admittance measurements, using PtO (x) -Schottky diodes, revealed a higher compensation for increasing oxygen partial pressure. A shallow donor level with a thermal activation energy of similar to 40 meV was observed by thermal admittance spectroscopy. This defect level was attributed to the I(3a) transition observed in photoluminescence and commonly assigned to interstitial zinc.",

keywords = "ZnO, Schottky diode, homoepitaxy, defects, admittance spectroscopy, photoluminescence, photoluminescence (PL), thermal admittance spectroscopy (TAS), PULSED-LASER DEPOSITION, VAPOR-PHASE EPITAXY, GROWTH, SAPPHIRE, CONTACTS",

author = "A. Lajn and {von Wenckstern}, H. and G. Benndorf and Dietrich, {C. P.} and M. Brandt and G. Biehne and H. Hochmuth and M. Lorenz and M. Grundmann",

year = "2010",

month = may,

doi = "10.1007/s11664-009-1017-7",

language = "English",

volume = "39",

pages = "595--600",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "5",

}

TY - JOUR

T1 - Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

AU - Lajn, A.

AU - von Wenckstern, H.

AU - Benndorf, G.

AU - Dietrich, C. P.

AU - Brandt, M.

AU - Biehne, G.

AU - Hochmuth, H.

AU - Lorenz, M.

AU - Grundmann, M.

PY - 2010/5

Y1 - 2010/5

N2 - Nominally undoped homoepitaxial ZnO thin films grown with pulsed-laser deposition at various oxygen partial pressures (3 x 10(-4)-0.1 mbar) were investigated with respect to shallow donors and compensation. From x-ray diffraction and photoluminescence studies, a correlation of the oxygen partial pressure and the strain in the samples was found. Capacitance-voltage and thermal admittance measurements, using PtO (x) -Schottky diodes, revealed a higher compensation for increasing oxygen partial pressure. A shallow donor level with a thermal activation energy of similar to 40 meV was observed by thermal admittance spectroscopy. This defect level was attributed to the I(3a) transition observed in photoluminescence and commonly assigned to interstitial zinc.

AB - Nominally undoped homoepitaxial ZnO thin films grown with pulsed-laser deposition at various oxygen partial pressures (3 x 10(-4)-0.1 mbar) were investigated with respect to shallow donors and compensation. From x-ray diffraction and photoluminescence studies, a correlation of the oxygen partial pressure and the strain in the samples was found. Capacitance-voltage and thermal admittance measurements, using PtO (x) -Schottky diodes, revealed a higher compensation for increasing oxygen partial pressure. A shallow donor level with a thermal activation energy of similar to 40 meV was observed by thermal admittance spectroscopy. This defect level was attributed to the I(3a) transition observed in photoluminescence and commonly assigned to interstitial zinc.

KW - ZnO

KW - Schottky diode

KW - homoepitaxy

KW - defects

KW - admittance spectroscopy

KW - photoluminescence

KW - photoluminescence (PL)

KW - thermal admittance spectroscopy (TAS)

KW - PULSED-LASER DEPOSITION

KW - VAPOR-PHASE EPITAXY

KW - GROWTH

KW - SAPPHIRE

KW - CONTACTS

U2 - 10.1007/s11664-009-1017-7

DO - 10.1007/s11664-009-1017-7

M3 - Article

SN - 0361-5235

VL - 39

SP - 595

EP - 600

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

Abstract

Keywords

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