Shallow Donors and Compensation in Homoepitaxial ZnO Thin Films

A. Lajn*, H. von Wenckstern, G. Benndorf, C. P. Dietrich, M. Brandt, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Nominally undoped homoepitaxial ZnO thin films grown with pulsed-laser deposition at various oxygen partial pressures (3 x 10(-4)-0.1 mbar) were investigated with respect to shallow donors and compensation. From x-ray diffraction and photoluminescence studies, a correlation of the oxygen partial pressure and the strain in the samples was found. Capacitance-voltage and thermal admittance measurements, using PtO (x) -Schottky diodes, revealed a higher compensation for increasing oxygen partial pressure. A shallow donor level with a thermal activation energy of similar to 40 meV was observed by thermal admittance spectroscopy. This defect level was attributed to the I(3a) transition observed in photoluminescence and commonly assigned to interstitial zinc.

Original languageEnglish
Pages (from-to)595-600
Number of pages6
JournalJournal of Electronic Materials
Volume39
Issue number5
DOIs
Publication statusPublished - May 2010

Keywords

  • ZnO
  • Schottky diode
  • homoepitaxy
  • defects
  • admittance spectroscopy
  • photoluminescence
  • photoluminescence (PL)
  • thermal admittance spectroscopy (TAS)
  • PULSED-LASER DEPOSITION
  • VAPOR-PHASE EPITAXY
  • GROWTH
  • SAPPHIRE
  • CONTACTS

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