Self-gating in an electron Y-branch switch at room temperature

D. Hartmann*, L. Worschech, Sven Höfling, A. Forchel, J. P. Reithmaier

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


The authors have observed a self-gating effect in electron Y-branch switches at room temperature. The devices, with geometrical branch widths smaller than 50 nm, were fabricated by electron beam lithography and shallow wet chemical etching from a modulation doped GaAs/AlGaAs heterostructure with a two-dimensional electron gas approximately 30 nm below the surface. The side-gate operation is enhanced by the self-gating effect between the branches. In particular, the differential voltage gain of the Y-branch switch increases approximately quadratically with the bias voltage. (c) 2006 American Institute of Physics.

Original languageEnglish
Article number122109
Number of pages3
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 18 Sept 2006




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