Abstract
The authors have observed a self-gating effect in electron Y-branch switches at room temperature. The devices, with geometrical branch widths smaller than 50 nm, were fabricated by electron beam lithography and shallow wet chemical etching from a modulation doped GaAs/AlGaAs heterostructure with a two-dimensional electron gas approximately 30 nm below the surface. The side-gate operation is enhanced by the self-gating effect between the branches. In particular, the differential voltage gain of the Y-branch switch increases approximately quadratically with the bias voltage. (c) 2006 American Institute of Physics.
Original language | English |
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Article number | 122109 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 12 |
DOIs | |
Publication status | Published - 18 Sept 2006 |
Keywords
- TRANSPORT