Self-gating in an electron Y-branch switch at room temperature

D. Hartmann*, L. Worschech, Sven Höfling, A. Forchel, J. P. Reithmaier

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The authors have observed a self-gating effect in electron Y-branch switches at room temperature. The devices, with geometrical branch widths smaller than 50 nm, were fabricated by electron beam lithography and shallow wet chemical etching from a modulation doped GaAs/AlGaAs heterostructure with a two-dimensional electron gas approximately 30 nm below the surface. The side-gate operation is enhanced by the self-gating effect between the branches. In particular, the differential voltage gain of the Y-branch switch increases approximately quadratically with the bias voltage. (c) 2006 American Institute of Physics.

Original languageEnglish
Article number122109
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number12
DOIs
Publication statusPublished - 18 Sept 2006

Keywords

  • TRANSPORT

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