Self-compensation in highly n-type InN

C. Rauch; F. Tuomisto; P. D. C. King; T. D. Veal; H. Lu; W. J. Schaff

doi:10.1063/1.4732508

Self-compensation in highly n-type InN

C. Rauch, F. Tuomisto, P. D. C. King, T. D. Veal, H. Lu, W. J. Schaff

Research output: Contribution to journal › Article › peer-review

Abstract

Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.

Original language	English
Article number	011903
Number of pages	4
Journal	Applied Physics Letters
Volume	101
Issue number	1
DOIs	https://doi.org/10.1063/1.4732508
Publication status	Published - Jul 2012

Keywords

Positrons
Carrier mobility
Electron capture
Electron mobility
Doppler effect

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10.1063/1.4732508

1.4732508
Copyright 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, Vol 101, No 1, and may be found at: http://scitation.aip.org/content/aip/journal/apl/101/1/10.1063/1.4732508
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title = "Self-compensation in highly n-type InN",

abstract = "Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.",

keywords = "Positrons, Carrier mobility, Electron capture, Electron mobility, Doppler effect",

author = "C. Rauch and F. Tuomisto and King, \{P. D. C.\} and Veal, \{T. D.\} and H. Lu and Schaff, \{W. J.\}",

note = "This work has been supported by the European Commission under the 7th Framework Program through the Marie Curie Initial Training Network RAINBOW, Contract No. PITN-Ga-2008-213238, the Engineering and Physical Sciences Research Council, UK, under Grant No. EP/G004447/1, and the Academy of Finland. ",

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AU - Rauch, C.

AU - Tuomisto, F.

AU - King, P. D. C.

AU - Veal, T. D.

AU - Lu, H.

AU - Schaff, W. J.

N1 - This work has been supported by the European Commission under the 7th Framework Program through the Marie Curie Initial Training Network RAINBOW, Contract No. PITN-Ga-2008-213238, the Engineering and Physical Sciences Research Council, UK, under Grant No. EP/G004447/1, and the Academy of Finland.

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N2 - Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.

AB - Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.

KW - Positrons

KW - Carrier mobility

KW - Electron capture

KW - Electron mobility

KW - Doppler effect

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Self-compensation in highly n-type InN

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