Self-compensation in highly n-type InN

C. Rauch, F. Tuomisto, P. D. C. King, T. D. Veal, H. Lu, W. J. Schaff

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied, and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.

Original languageEnglish
Article number011903
Number of pages4
JournalApplied Physics Letters
Volume101
Issue number1
DOIs
Publication statusPublished - Jul 2012

Keywords

  • Positrons
  • Carrier mobility
  • Electron capture
  • Electron mobility
  • Doppler effect

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