Selective etching of independent contacts in a double quantum-well structure: Quantum-gate transistor

Double GaAs quantum wells (QWs) embedded between modulation-doped AlGaAs barriers with different aluminium (Al) contents were grown by molecular beam epitaxy. Independent electric contacts to each well were realized by applying different etching techniques without substrate removal. In particular, the lower quantum well was electrically pinched off by a local undercut of the lower AlGaAs barrier exploiting an Al selective etching process. In contrast, the upper quantum well was locally depleted by top etched trenches. Transistor operation of quantum wires defined in such bilayers is demonstrated at room temperature with one GaAs layer used as conducting channel controlled by the other nearby GaAs layer as efficient quantum gate. (c) 2008 American Institute of Physics.