Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

A. Tierno; T. Ackemann; C. G. Leburn; C. T. A. Brown

doi:10.1063/1.3524824

Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

A. Tierno, T. Ackemann, C. G. Leburn, C. T. A. Brown

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

Original language	English
Article number	231104
Pages (from-to)	-
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	23
DOIs	https://doi.org/10.1063/1.3524824
Publication status	Published - 6 Dec 2010

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10.1063/1.3524824

Modular Ultrafast Sources EP/E06440X/1: Modular Ultrafast Sources
Sibbett, W. (PI) & Brown, C. T. A. (CoI)
EPSRC
1/09/07 → 30/06/12
Project: Standard

Cite this

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title = "Saturation of absorption and gain in a quantum dot diode with continuous-wave driving",

abstract = "We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]",

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AU - Tierno, A.

AU - Ackemann, T.

AU - Leburn, C. G.

AU - Brown, C. T. A.

PY - 2010/12/6

Y1 - 2010/12/6

N2 - We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

AB - We have observed saturation of absorption and gain in ensembles of InAs/GaAs self-assembled quantum dots at room temperature with continuous-wave driving in the 1.24-1.28 mu m wavelength range. The saturation intensity was found to be I-sat=(1.4-4.5) X 10(9) W/m(2) in absorption and I-sat =(0.2-3.8)X10(9) W/m(2) in gain, depending on the detuning. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3524824]

U2 - 10.1063/1.3524824

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VL - 97

SP - -

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 231104

ER -

Saturation of absorption and gain in a quantum dot diode with continuous-wave driving

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Modular Ultrafast Sources EP/E06440X/1: Modular Ultrafast Sources

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