Route for controlled growth of ultrathin polyimide films with Si-C bonding to Si(100)-2 X 1

T Bitzer, N V Richardson

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

In this high resolution electron energy loss spectroscopy study, we demonstrate the growth of an ultrathin polyimide film on Si(100)-2 X 1 exhibiting Si-C bonds at the organic film/substrate interface. For the controlled formation of the film, which has been carried out by molecular deposition, maleic anhydride, 1,4-phenylene diamine and pyromellitic dianhydride have been sequentially deposited on Si(100)-2 X 1 at room temperature. Imidisation was initiated by thermally curing the amic acid film at 430 degrees C. The vibrational data confirm the absence of oxidised silicon at the film/substrate interface. (C) 1999 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)339-343
Number of pages5
JournalApplied Surface Science
Volume144-45
Publication statusPublished - Apr 1999

Keywords

  • adsorption
  • film growth
  • polyimides
  • semiconductor
  • HREELS
  • ADSORPTION

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