Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

RS Britton; T Grevatt; A Malinowski; RT Harley; P Perozzo; AR Cameron; Alan Miller

doi:10.1063/1.122403

Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

RS Britton, T Grevatt, A Malinowski, RT Harley, P Perozzo, AR Cameron, Alan Miller

School of Physics and Astronomy

Research output: Other contribution

Abstract

We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].

Original language	English
Volume	73
DOIs	https://doi.org/10.1063/1.122403
Publication status	Published - 12 Oct 1998

Keywords

SEMICONDUCTORS
ELECTRONS
EXCITONS
TIMES
GAAS

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10.1063/1.122403

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@misc{b7fa5d16e2ac4f309474553a31734046,

title = "Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells",

abstract = "We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].",

keywords = "SEMICONDUCTORS, ELECTRONS, EXCITONS, TIMES, GAAS",

author = "RS Britton and T Grevatt and A Malinowski and RT Harley and P Perozzo and AR Cameron and Alan Miller",

note = "Appl Phys Lett",

year = "1998",

month = oct,

day = "12",

doi = "10.1063/1.122403",

language = "English",

volume = "73",

type = "Other",

}

TY - GEN

T1 - Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

AU - Britton, RS

AU - Grevatt, T

AU - Malinowski, A

AU - Harley, RT

AU - Perozzo, P

AU - Cameron, AR

AU - Miller, Alan

N1 - Appl Phys Lett

PY - 1998/10/12

Y1 - 1998/10/12

N2 - We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].

AB - We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D'yakonov-Perel (DP) mechanism with momentum scattering by phonons. In narrower wells, there is a strong dependence of relaxation rate on well width, as expected for the DP mechanism, but also considerable variation between samples from different sources, which we attribute to differences in sample interface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02541-8].

KW - SEMICONDUCTORS

KW - ELECTRONS

KW - EXCITONS

KW - TIMES

KW - GAAS

UR - http://www.scopus.com/inward/record.url?scp=0000450697&partnerID=8YFLogxK

U2 - 10.1063/1.122403

DO - 10.1063/1.122403

M3 - Other contribution

VL - 73

ER -

Room temperature spin relaxation in GaAs/AlGaAs multiple quantum wells

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Keywords

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