Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 mu m

D. Bisping; Sven Höfling; D. Pucicki; M. Fischer; A. Forchel

doi:10.1049/el:20081035

Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 mu m

D. Bisping^*, Sven Höfling, D. Pucicki, M. Fischer, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Room-temperature continuous-wave operation of distributed feedback GaInNAs quantum well laser diodes on GaAs in the 1.5 mu m wavelength range is demonstrated for the first time. Singlemode emission with a sidemode suppression ratio of more than 45 dB is obtained at 1486 nm with a threshold current of 44 mA and an external efficiency of 0.06 W/A.

Original language	English
Pages (from-to)	737-U127
Number of pages	2
Journal	Electronics Letters
Volume	44
Issue number	12
DOIs	https://doi.org/10.1049/el:20081035
Publication status	Published - 5 Jun 2008

Keywords

1.5 MU-M

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10.1049/el:20081035

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title = "Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 mu m",

abstract = "Room-temperature continuous-wave operation of distributed feedback GaInNAs quantum well laser diodes on GaAs in the 1.5 mu m wavelength range is demonstrated for the first time. Singlemode emission with a sidemode suppression ratio of more than 45 dB is obtained at 1486 nm with a threshold current of 44 mA and an external efficiency of 0.06 W/A.",

keywords = "1.5 MU-M",

author = "D. Bisping and Sven H{\"o}fling and D. Pucicki and M. Fischer and A. Forchel",

year = "2008",

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doi = "10.1049/el:20081035",

language = "English",

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journal = "Electronics Letters",

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T1 - Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 mu m

AU - Bisping, D.

AU - Höfling, Sven

AU - Pucicki, D.

AU - Fischer, M.

AU - Forchel, A.

PY - 2008/6/5

Y1 - 2008/6/5

N2 - Room-temperature continuous-wave operation of distributed feedback GaInNAs quantum well laser diodes on GaAs in the 1.5 mu m wavelength range is demonstrated for the first time. Singlemode emission with a sidemode suppression ratio of more than 45 dB is obtained at 1486 nm with a threshold current of 44 mA and an external efficiency of 0.06 W/A.

AB - Room-temperature continuous-wave operation of distributed feedback GaInNAs quantum well laser diodes on GaAs in the 1.5 mu m wavelength range is demonstrated for the first time. Singlemode emission with a sidemode suppression ratio of more than 45 dB is obtained at 1486 nm with a threshold current of 44 mA and an external efficiency of 0.06 W/A.

KW - 1.5 MU-M

U2 - 10.1049/el:20081035

DO - 10.1049/el:20081035

M3 - Article

SN - 0013-5194

VL - 44

SP - 737-U127

JO - Electronics Letters

JF - Electronics Letters

IS - 12

ER -

Room-temperature singlemode continuous-wave operation of distributed feedback GaInNAs laser diodes at 1.5 mu m

Abstract

Keywords

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