Room temperature single-electron memory and light sensor with three-dimensionally positioned InAs quantum dots

S. Goepfert*, L. Worschech, S. Lingemann, C. Schneider, D. Press, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The authors report on the fabrication and characterization of single-electron memories based on site-controlled InAs quantum dots (QDs) embedded in a GaAs/AlGaAs quantum-wire transistor. By using a hole structure template on a modulation-doped GaAs/AlGaAs heterostructure in combination with etching techniques, two single InAs QDs were centrally positioned in a quantum-wire transistor so that pronounced shifts of the transistor threshold occur by charging of the QDs with single electrons. Single-electron read and write functionalities up to room temperature were observed. The memory function can be also controlled by light with a wavelength in the telecommunication range. (C) 2010 American Institute of Physics. [doi:10.1063/1.3520522]

Original languageEnglish
Article number222112
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number22
DOIs
Publication statusPublished - 29 Nov 2010

Keywords

  • FIELD-EFFECT TRANSISTOR
  • CHANNEL
  • DEVICE

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