Room temperature polariton light emitting diode with integrated tunnel junction

S. Brodbeck*, J. -P. Jahn, A. Rahimi-Iman, J. Fischer, M. Amthor, S. Reitzenstein, M. Kamp, C. Schneider, S. Hoefling

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement. (C) 2013 Optical Society of America

Original languageEnglish
Pages (from-to)31098-31104
Number of pages7
JournalOptics Express
Volume21
Issue number25
DOIs
Publication statusPublished - 16 Dec 2013

Keywords

  • QUANTUM MICROCAVITY STRUCTURES
  • SEMICONDUCTOR MICROCAVITIES
  • ELECTRIC-FIELD
  • DEPENDENCE
  • GAAS
  • GAP

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