Room temperature polariton light emitting diode with integrated tunnel junction

S. Brodbeck; J. -P. Jahn; A. Rahimi-Iman; J. Fischer; M. Amthor; S. Reitzenstein; M. Kamp; C. Schneider; S. Hoefling

doi:10.1364/OE.21.031098

Room temperature polariton light emitting diode with integrated tunnel junction

S. Brodbeck^*, J. -P. Jahn, A. Rahimi-Iman, J. Fischer, M. Amthor, S. Reitzenstein, M. Kamp, C. Schneider, S. Hoefling

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement. (C) 2013 Optical Society of America

Original language	English
Pages (from-to)	31098-31104
Number of pages	7
Journal	Optics Express
Volume	21
Issue number	25
DOIs	https://doi.org/10.1364/OE.21.031098
Publication status	Published - 16 Dec 2013

Keywords

QUANTUM MICROCAVITY STRUCTURES
SEMICONDUCTOR MICROCAVITIES
ELECTRIC-FIELD
DEPENDENCE
GAAS
GAP

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10.1364/OE.21.031098

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title = "Room temperature polariton light emitting diode with integrated tunnel junction",

abstract = "We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement. (C) 2013 Optical Society of America",

keywords = "QUANTUM MICROCAVITY STRUCTURES, SEMICONDUCTOR MICROCAVITIES, ELECTRIC-FIELD, DEPENDENCE, GAAS, GAP",

author = "S. Brodbeck and Jahn, {J. -P.} and A. Rahimi-Iman and J. Fischer and M. Amthor and S. Reitzenstein and M. Kamp and C. Schneider and S. Hoefling",

year = "2013",

month = dec,

day = "16",

doi = "10.1364/OE.21.031098",

language = "English",

volume = "21",

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journal = "Optics Express",

issn = "1094-4087",

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T1 - Room temperature polariton light emitting diode with integrated tunnel junction

AU - Brodbeck, S.

AU - Jahn, J. -P.

AU - Rahimi-Iman, A.

AU - Fischer, J.

AU - Amthor, M.

AU - Reitzenstein, S.

AU - Kamp, M.

AU - Schneider, C.

AU - Hoefling, S.

PY - 2013/12/16

Y1 - 2013/12/16

N2 - We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement. (C) 2013 Optical Society of America

AB - We present a diode incorporating a large number (12) of GaAs quantum wells that emits light from exciton-polariton states at room temperature. A reversely biased tunnel junction is placed in the cavity region to improve current injection into the device. Electroluminescence studies reveal two polariton branches which are spectrally separated by a Rabi splitting of 6.5 meV. We observe an anticrossing of the two branches when the temperature is lowered below room temperature as well as a Stark shift of both branches in a bias dependent photoluminescence measurement. (C) 2013 Optical Society of America

KW - QUANTUM MICROCAVITY STRUCTURES

KW - SEMICONDUCTOR MICROCAVITIES

KW - ELECTRIC-FIELD

KW - DEPENDENCE

KW - GAAS

KW - GAP

U2 - 10.1364/OE.21.031098

DO - 10.1364/OE.21.031098

M3 - Article

SN - 1094-4087

VL - 21

SP - 31098

EP - 31104

JO - Optics Express

JF - Optics Express

IS - 25

ER -

Room temperature polariton light emitting diode with integrated tunnel junction

Abstract

Keywords

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