Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

Andreas Pfenning; Georg Knebl; Fabian Hartmann; Robert Weih; Andreas Bader; Monika Emmerling; Martin Kamp; Sven Höfling; Lukas Worschech

doi:10.1063/1.4973894

Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

Andreas Pfenning, Georg Knebl, Fabian Hartmann, Robert Weih, Andreas Bader, Monika Emmerling, Martin Kamp, Sven Höfling, Lukas Worschech

Research output: Contribution to journal › Article › peer-review

Abstract

We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga_0.84In_0.16Sb and GaAs_0.05Sb_0.95 prewell emitters leads to room temperature resonant tunneling with peak‐to‐valley current ratios of 1.45 and 1.36 , respectively. The room temperature operation is attributed to the enhanced Γ ‐L‐valley energy separation and consequently depopulation of L‐valley states in the conduction band of the ternary compound emitter prewell with respect to bulk GaSb.

Original language	English
Article number	033507
Number of pages	5
Journal	Applied Physics Letters
Volume	110
Issue number	3
DOIs	https://doi.org/10.1063/1.4973894
Publication status	Published - 20 Jan 2017

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title = "Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection",

abstract = "We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters leads to room temperature resonant tunneling with peak‐to‐valley current ratios of 1.45 and 1.36 , respectively. The room temperature operation is attributed to the enhanced Γ ‐L‐valley energy separation and consequently depopulation of L‐valley states in the conduction band of the ternary compound emitter prewell with respect to bulk GaSb.",

author = "Andreas Pfenning and Georg Knebl and Fabian Hartmann and Robert Weih and Andreas Bader and Monika Emmerling and Martin Kamp and Sven H{\"o}fling and Lukas Worschech",

note = "The authors are grateful for financial support by the state of Bavaria, the German Ministry of Education and Research (BMBF) within the national project HIRT (FKZ 13XP5003B).",

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doi = "10.1063/1.4973894",

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T1 - Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

AU - Pfenning, Andreas

AU - Knebl, Georg

AU - Hartmann, Fabian

AU - Weih, Robert

AU - Bader, Andreas

AU - Emmerling, Monika

AU - Kamp, Martin

AU - Höfling, Sven

AU - Worschech, Lukas

N1 - The authors are grateful for financial support by the state of Bavaria, the German Ministry of Education and Research (BMBF) within the national project HIRT (FKZ 13XP5003B).

PY - 2017/1/20

Y1 - 2017/1/20

N2 - We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters leads to room temperature resonant tunneling with peak‐to‐valley current ratios of 1.45 and 1.36 , respectively. The room temperature operation is attributed to the enhanced Γ ‐L‐valley energy separation and consequently depopulation of L‐valley states in the conduction band of the ternary compound emitter prewell with respect to bulk GaSb.

AB - We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters leads to room temperature resonant tunneling with peak‐to‐valley current ratios of 1.45 and 1.36 , respectively. The room temperature operation is attributed to the enhanced Γ ‐L‐valley energy separation and consequently depopulation of L‐valley states in the conduction band of the ternary compound emitter prewell with respect to bulk GaSb.

U2 - 10.1063/1.4973894

DO - 10.1063/1.4973894

M3 - Article

SN - 0003-6951

VL - 110

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033507

ER -

Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection

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